| No. |
Part Name |
Description |
Manufacturer |
| 31 |
ADDC02808PBKV |
28 V, 200 W Pulsed DC/DC Converter with Integral EMI Filter |
Analog Devices |
| 32 |
ADDC02808PBTV |
28 V, 200 W Pulsed DC/DC Converter with Integral EMI Filter |
Analog Devices |
| 33 |
ADDC02808PBTV/QMLH |
28 V, 200 W Pulsed DC/DC Converter with Integral EMI Filter |
Analog Devices |
| 34 |
ADDC02812DA |
28 V/100 W DC/DC Converters with Integral EMI Filter |
Analog Devices |
| 35 |
ADDC02812DAKV |
28 V/100 W DC/DC Converters with Integral EMI Filter |
Analog Devices |
| 36 |
ADDC02812DATV |
28 V/100 W DC/DC Converters with Integral EMI Filter |
Analog Devices |
| 37 |
ADDC02812DATV/QMLH |
28 V/100 W DC/DC Converters with Integral EMI Filter |
Analog Devices |
| 38 |
ADDC02815DA |
28 V/100 W DC/DC Converters with Integral EMI Filter |
Analog Devices |
| 39 |
ADDC02815DAKV |
28 V/100 W DC/DC Converters with Integral EMI Filter |
Analog Devices |
| 40 |
ADDC02815DATV |
28 V/100 W DC/DC Converters with Integral EMI Filter |
Analog Devices |
| 41 |
ADDC02815DATV/QMLH |
28 V/100 W DC/DC Converters with Integral EMI Filter |
Analog Devices |
| 42 |
ADDC02828SA |
28 V/100 W DC/DC Converter with Integral EMI Filter |
Analog Devices |
| 43 |
ADDC02828SAKV |
28 V/100 W DC/DC Converter with Integral EMI Filter |
Analog Devices |
| 44 |
ADDC02828SATV |
28 V/100 W DC/DC Converter with Integral EMI Filter |
Analog Devices |
| 45 |
ADDC02828SATV/883B |
28 V/100 W DC/DC Converter with Integral EMI Filter |
Analog Devices |
| 46 |
CQY10 |
Gallium arsenide luminiscence diode, infrared source for high modulation frequencies. The spectral emission is in range of the spectral sensitivity of silicon photoelektronic devices |
AEG-TELEFUNKEN |
| 47 |
EMH2408 |
N-Channel Power MOSFET, 20V, 4A, 45mOhm, Dual EMH8 |
ON Semiconductor |
| 48 |
EMH2409 |
N-Channel Power MOSFET, 30V, 4A, 59mOhm, Dual EMH8 |
ON Semiconductor |
| 49 |
EMH2412 |
N-Channel Power MOSFET, 24V, 6A, 27mOhm, Dual EMH8 |
ON Semiconductor |
| 50 |
EMH2604 |
Power MOSFET, 20V, 4A, 45mOhm, -20V, -3A, 85mOhm, Complementary Dual EMH8 |
ON Semiconductor |
| 51 |
ENA0471 |
Schottky Barrier Diode, 30V, 2A, Low VF, Non-Monolithic Dual EMH8 Common Cathode |
ON Semiconductor |
| 52 |
ENA1141 |
N-Channel Power MOSFET, 20V, 6A, 25mOhm, Dual EMH8 |
ON Semiconductor |
| 53 |
ENA1379 |
Schottky Barrier Diode, 30V, 2A, Low IR, Non-Monolithic Dual EMH8 Common Cathode |
ON Semiconductor |
| 54 |
ENA1421 |
N-Channel Power MOSFET, 30V, 5A, 36.5mOhm, Dual EMH8 |
ON Semiconductor |
| 55 |
ENA2267 |
N-Channel Power MOSFET, 24V, 9A, 15mohm, Dual EMH8 |
ON Semiconductor |
| 56 |
FEDSM2000-11043 |
DUAL EMISSION LASER INDUCED FLUORESCENCE TECHNIQUE (DELIF) FOR OIL FILM THICKNESS AND TEMPERATURE MEASUREMENT |
etc |
| 57 |
GL450 |
BIDIRECTIONAL EMISSION TYPE INFRARED LIGHT EMITTING DIODE |
SHARP |
| 58 |
GL451 |
BIDIRECTIONAL EMISSION TYPE INFRARED LIGHT EMITTING DIODE |
SHARP |
| 59 |
GL452 |
BIDIRECTIONAL EMISSION TYPE INFRARED LIGHT EMITTING DIODE |
SHARP |
| 60 |
GL453 |
Bidirectional Emission Type Infrared Emitting Diode |
SHARP |
| | | |
