No. |
Part Name |
Description |
Manufacturer |
31 |
HR24A-9ALJB4SA2200A |
CIRCULAR WATER-PROOF CONNECTORS FOR SENSORS |
Hirose Electric |
32 |
HR24A-9ALJB4SA2200B |
CIRCULAR WATER-PROOF CONNECTORS FOR SENSORS |
Hirose Electric |
33 |
HY514400ALJ |
1M x 4-bit CMOS DRAM |
etc |
34 |
HY534256ALJ |
256K x 4-bit CMOS DRAM |
Hynix Semiconductor |
35 |
HY534256ALJ-45 |
256K x 4-bit CMOS DRAM, 45ns, low power |
Hynix Semiconductor |
36 |
HY534256ALJ-50 |
256K x 4-bit CMOS DRAM, 50ns, low power |
Hynix Semiconductor |
37 |
HY534256ALJ-60 |
256K x 4-bit CMOS DRAM, 60ns, low power |
Hynix Semiconductor |
38 |
HY534256ALJ-70 |
256K x 4-bit CMOS DRAM, 70ns, low power |
Hynix Semiconductor |
39 |
HY534256ALJ-80 |
256K x 4-bit CMOS DRAM, 80ns, low power |
Hynix Semiconductor |
40 |
HY62256ALJ |
32Kx8bit CMOS SRAM |
Hynix Semiconductor |
41 |
HY62256ALJ-55 |
32Kx8bit CMOS SRAM, standby current=100uA, 55ns |
Hynix Semiconductor |
42 |
HY62256ALJ-70 |
32Kx8bit CMOS SRAM, standby current=100uA, 70ns |
Hynix Semiconductor |
43 |
HY62256ALJ-85 |
32Kx8bit CMOS SRAM, standby current=100uA, 85ns |
Hynix Semiconductor |
44 |
HY62256ALJ-I |
32Kx8bit CMOS SRAM |
Hynix Semiconductor |
45 |
HY62256ALJ-I-55 |
32Kx8bit CMOS SRAM, standby current=100uA, 55ns |
Hynix Semiconductor |
46 |
HY62256ALJ-I-70 |
32Kx8bit CMOS SRAM, standby current=100uA, 70ns |
Hynix Semiconductor |
47 |
HY62256ALJ-I-85 |
32Kx8bit CMOS SRAM, standby current=100uA, 85ns |
Hynix Semiconductor |
48 |
ICM7216ALJL |
8-Digit, Multi-Function, Frequency Counters/Timers |
Intersil |
49 |
ICM7226ALJL |
8-Digit, Multi-Function, Frequency Counter/Timer |
Intersil |
50 |
KM75C104ALJ-20 |
20 ns, 5 V, CMOS FIFO with programmable flag |
Samsung Electronic |
51 |
KM75C104ALJ-25 |
25 ns, 5 V, CMOS FIFO with programmable flag |
Samsung Electronic |
52 |
KM75C104ALJ-35 |
35 ns, 5 V, CMOS FIFO with programmable flag |
Samsung Electronic |
53 |
KM75C104ALJ-50 |
50 ns, 5 V, CMOS FIFO with programmable flag |
Samsung Electronic |
54 |
KM75C104ALJI-20 |
20 ns, 5 V, CMOS FIFO with programmable flag |
Samsung Electronic |
55 |
KM75C104ALJI-25 |
25 ns, 5 V, CMOS FIFO with programmable flag |
Samsung Electronic |
56 |
KM75C104ALJI-35 |
35 ns, 5 V, CMOS FIFO with programmable flag |
Samsung Electronic |
57 |
KM75C104ALJI-50 |
50 ns, 5 V, CMOS FIFO with programmable flag |
Samsung Electronic |
58 |
MAXM17503ALJ+ |
4.5V-60V, 2.5A High-Efficiency, DC-DC Step-Down Power Module with Integrated Inductor |
MAXIM - Dallas Semiconductor |
59 |
MAXM17503ALJ+T |
4.5V-60V, 2.5A High-Efficiency, DC-DC Step-Down Power Module with Integrated Inductor |
MAXIM - Dallas Semiconductor |
60 |
MAXM17504ALJ+ |
4.5V-60V, 3.5A High-Efficiency, DC-DC Step-Down Power Module with Integrated Inductor |
MAXIM - Dallas Semiconductor |
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