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Datasheets for ASIN

Datasheets found :: 109
Page: | 1 | 2 | 3 | 4 |
No. Part Name Description Manufacturer
31 BB404 Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier Hitachi Semiconductor
32 BB404M Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier Hitachi Semiconductor
33 BB405M Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier Hitachi Semiconductor
34 BB501 Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier Hitachi Semiconductor
35 BB501C Build in Biasing Circuit MOS FET IC UHF RF Amplifier Hitachi Semiconductor
36 BB501M Build in Biasing Circuit MOS FET IC UHF RF Amplifier Hitachi Semiconductor
37 BB502 Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier Hitachi Semiconductor
38 BB502C Build in Biasing Circuit MOS FET IC UHF RF Amplifier Hitachi Semiconductor
39 BB502M Build in Biasing Circuit MOS FET IC UHF RF Amplifier Hitachi Semiconductor
40 BB503 Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier Hitachi Semiconductor
41 BB503C Build in Biasing Circuit MOS FET IC UHF RF Amplifier Hitachi Semiconductor
42 BB503M Build in Biasing Circuit MOS FET IC UHF RF Amplifier Hitachi Semiconductor
43 BB601M Build in Biasing Circuit MOS FET IC UHF RF Amplifier Hitachi Semiconductor
44 BF1005 RF-MOSFET - integrated full biasing network, VDS=5V, gfs=24mS, Gp=19dB, F=1.4dB Infineon
45 BF1005R RF-MOSFET - integrated full biasing network, VDS=5V, gfs=24mS, Gps=19dB, F=1.4dB Infineon
46 BF1005S RF-MOSFET - integrated full biasing network, VDS=5V, gfs=30mS, Gp=20dB, F=1.4dB Infineon
47 BF1005SR RF-MOSFET - integrated full biasing network, VDS=5V, gfs=24mS, Gp=19dB, F=1.4dB Infineon
48 BF1009S RF-MOSFET - integrated full biasing network, VDS=9V, gfs=30mS, Gps=22dB, F=1.4dB; Datasheet on demand Infineon
49 BF1009SR RF-MOSFET - integrated full biasing network, VDS=9V, gfs=30mS, Gps=22dB, F=1.4dB; Datasheet on demand Infineon
50 BF2030 RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=31mS, Gp=23dB, F=1.5dB Infineon
51 BF2030R RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=31mS, Gp=23dB, F=1.5dB Infineon
52 BF2030W RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=31mS, Gp=23dB, F=1.5dB Infineon
53 BF2040 RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=41mS, Gp=23dB, F=1.5dB Infineon
54 BF2040R RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=41mS, Gp=23dB, F=1.5dB Infineon
55 BF2040W RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=41mS, Gp=23dB, F=1.5dB Infineon
56 BIASING OF TRANSISTORS Application Note NEC
57 BWD Aluminum Housed Wirewound Resistors, Anodized aluminum casing to utilize heat-sink effect, Self-protecting, Short circuit proof, Protection according to IP 54 Vishay
58 C505C 8-Bit Microcontrollers - General Description: The C505C enhances the C500 family of 8-bit Microcontrollers by a new member which provides full CAN version 2.0 B integrated on-chip. The C505C meets the current requirements for increasingly Infineon
59 CDG22 Silicon Planar Biasing Diode Honey Technology
60 CDG22 SILICON PLANAR BIASING DIODE Semtech


Datasheets found :: 109
Page: | 1 | 2 | 3 | 4 |



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