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Datasheets for ASIN

Datasheets found :: 111
Page: | 1 | 2 | 3 | 4 |
No. Part Name Description Manufacturer
31 BB403M Build in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier Hitachi Semiconductor
32 BB404 Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier Hitachi Semiconductor
33 BB404M Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier Hitachi Semiconductor
34 BB405M Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier Hitachi Semiconductor
35 BB501 Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier Hitachi Semiconductor
36 BB501C Build in Biasing Circuit MOS FET IC UHF RF Amplifier Hitachi Semiconductor
37 BB501M Build in Biasing Circuit MOS FET IC UHF RF Amplifier Hitachi Semiconductor
38 BB502 Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier Hitachi Semiconductor
39 BB502C Build in Biasing Circuit MOS FET IC UHF RF Amplifier Hitachi Semiconductor
40 BB502M Build in Biasing Circuit MOS FET IC UHF RF Amplifier Hitachi Semiconductor
41 BB503 Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier Hitachi Semiconductor
42 BB503C Build in Biasing Circuit MOS FET IC UHF RF Amplifier Hitachi Semiconductor
43 BB503M Build in Biasing Circuit MOS FET IC UHF RF Amplifier Hitachi Semiconductor
44 BB601M Build in Biasing Circuit MOS FET IC UHF RF Amplifier Hitachi Semiconductor
45 BF1005 RF-MOSFET - integrated full biasing network, VDS=5V, gfs=24mS, Gp=19dB, F=1.4dB Infineon
46 BF1005R RF-MOSFET - integrated full biasing network, VDS=5V, gfs=24mS, Gps=19dB, F=1.4dB Infineon
47 BF1005S RF-MOSFET - integrated full biasing network, VDS=5V, gfs=30mS, Gp=20dB, F=1.4dB Infineon
48 BF1005SR RF-MOSFET - integrated full biasing network, VDS=5V, gfs=24mS, Gp=19dB, F=1.4dB Infineon
49 BF1009S RF-MOSFET - integrated full biasing network, VDS=9V, gfs=30mS, Gps=22dB, F=1.4dB; Datasheet on demand Infineon
50 BF1009SR RF-MOSFET - integrated full biasing network, VDS=9V, gfs=30mS, Gps=22dB, F=1.4dB; Datasheet on demand Infineon
51 BF2030 RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=31mS, Gp=23dB, F=1.5dB Infineon
52 BF2030R RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=31mS, Gp=23dB, F=1.5dB Infineon
53 BF2030W RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=31mS, Gp=23dB, F=1.5dB Infineon
54 BF2040 RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=41mS, Gp=23dB, F=1.5dB Infineon
55 BF2040R RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=41mS, Gp=23dB, F=1.5dB Infineon
56 BF2040W RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=41mS, Gp=23dB, F=1.5dB Infineon
57 BIASING OF TRANSISTORS Application Note NEC
58 BWD Aluminum Housed Wirewound Resistors, Anodized aluminum casing to utilize heat-sink effect, Self-protecting, Short circuit proof, Protection according to IP 54 Vishay
59 C505C 8-Bit Microcontrollers - General Description: The C505C enhances the C500 family of 8-bit Microcontrollers by a new member which provides full CAN version 2.0 B integrated on-chip. The C505C meets the current requirements for increasingly Infineon
60 CDG22 Silicon Planar Biasing Diode Honey Technology


Datasheets found :: 111
Page: | 1 | 2 | 3 | 4 |



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