| No. |
Part Name |
Description |
Manufacturer |
| 31 |
SGA-4586 |
DC-4000 MHz, silicon germanium HBT cascadeable gain block. High output intercept: +29 dBm typ at 850 MHz |
Stanford Microdevices |
| 32 |
SGA-5286 |
DC-4000 MHz, silicon germanium HBT cascadeable gain block. High output intercept: +31.0 dBm typ at 850 MHz |
Stanford Microdevices |
| 33 |
SGA-5289 |
DC-5000 MHz, silicon germanium HBT cascadeable gain block. High output intercept: +32 dBm typ at 850 MHz |
Stanford Microdevices |
| 34 |
SGA-5386 |
DC-3200 MHz, silicon germanium HBT cascadeable gain block. High output intercept: +31 dBm typ at 850 MHz |
Stanford Microdevices |
| 35 |
SGA-5389 |
DC-3200 MHz, silicon germanium HBT cascadeable gain block. High output intercept: +31.5 dBm typ. at 850 MHz |
Stanford Microdevices |
| 36 |
SGA-5486 |
DC-2400 MHz, silicon germanium HBT cascadeable gain block. High output intercept: +32 dBm typ. at 850 MHz |
Stanford Microdevices |
| 37 |
SGA-5489 |
DC-4000 MHz, silicon germanium HBT cascadeable gain block. High output intercept: +30.8 dBm typ. at 850 MHz |
Stanford Microdevices |
| 38 |
SGA-5586 |
DC-4000 MHz, silicon germanium HBT cascadeable gain block. High output intercept: +32 dBm typ. at 850 MHz |
Stanford Microdevices |
| 39 |
SGA-5589 |
DC-4000 MHz, silicon germanium HBT cascadeable gain block. High output intercept: +33 dBm typ. at 850 MHz |
Stanford Microdevices |
| 40 |
SGA-6586 |
DC-2500 MHz, silicon germanium HTB cascadeable gain block. High output intercept: +34.0 dBm typ. at 850 MHz |
Stanford Microdevices |
| 41 |
SGA-6589 |
DC-4000 MHz, silicon germanium HTB cascadeable gain block. High output intercept: +32.5 dBm typ. at 850 MHz |
Stanford Microdevices |
| 42 |
SGA-7489 |
DC-3000 MHz 5V silicon germanium HBT cascdeable gain block. High output intercept; +36 dBm typ. at 850 MHz. |
Stanford Microdevices |
| 43 |
SNA-586 |
DC-5 GNz cascadable GaAs HBT MMIC amplifier. High output IP3: 32.5 dBm at 850 MHz. Devices per reel 1000. Reel size 7 |
Stanford Microdevices |
| 44 |
STL22N65M5 |
N-channel 650 V, 0.198 Ohm typ., 15 A MDmesh(TM) V Power MOSFET in PowerFLAT 8x8 HV package |
ST Microelectronics |
| 45 |
STL24N60M2 |
N-channel 600 V, 0.186 Ohm typ., 18 A MDmesh II Plus(TM) low Qg Power MOSFET in a PowerFLAT 8x8 HV package |
ST Microelectronics |
| 46 |
STL34N65M5 |
N-channel 650 V, 0.99 Ohm typ., 22.5 A, MDmesh(TM) V Power MOSFET in a PowerFLAT 8x8 HV |
ST Microelectronics |
| 47 |
STL36N55M5 |
N-channel 550 V, 0.066 Ohm typ., 22.5 A MDmesh M5 Power MOSFET in a PowerFLAT 8x8 HV package |
ST Microelectronics |
| 48 |
STL45N65M5 |
N-channel 650 V, 0.075 Ohm typ., 22.5 A MDmesh(TM) V Power MOSFET in a PowerFLAT 8x8 HV package |
ST Microelectronics |
| 49 |
SXL-316-BLK |
800-970 MHz, 50 Ohm power amplifier module. High 3rd order intercept: +52dBm typ. at 850 MHz. Devices per reel 100/TRAY. |
Stanford Microdevices |
| 50 |
SXL-316-TR2 |
800-970 MHz, 50 Ohm power amplifier module. High 3rd order intercept: +52dBm typ. at 850 MHz. Devices per reel 1000. Reel size 13 |
Stanford Microdevices |
| 51 |
TP3098 |
UHF Linear Transistor 10dB Gain at 860MHz |
TRW |
| 52 |
TPV590 |
UHF Linear Transistor 0.25W, 14dB Gain at 860MHz |
TRW |
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