| No. |
Part Name |
Description |
Manufacturer |
| 31 |
AN569 |
PHASE MEASUREMENT AND CHARACTERIZATION OF RF MICROWAVE POWER TRANSISTORS |
SGS Thomson Microelectronics |
| 32 |
AN575 |
CALCULATION OF TRANSIL APPARENT DYNAMIC RESISTANCE |
SGS Thomson Microelectronics |
| 33 |
AN661 |
CALCULATION OF THE LOSSES IN A CHOPPER TOPOLOGY |
SGS Thomson Microelectronics |
| 34 |
AN682 |
A NEW GENERATION OF VERY LOW DROP VOLTAGE REGULATORS |
SGS Thomson Microelectronics |
| 35 |
AND8031 |
Isolated Precision Regulation of a Single 1.8 Volt Output from a Universal Line Input |
ON Semiconductor |
| 36 |
AND8031D |
Isolated Precision Regulation of a Single 1.8 Volt Output from a Universal Line Input |
ON Semiconductor |
| 37 |
AP9926EO |
Power MOSFETs from APEC provide the designer with the best combination of fast switching |
Advanced Power Electronics Corp. |
| 38 |
APPLICATION NOTE |
Application of low-saturation voltage transistors, wiper control, flasher, ignitor, electronic fuel injection control |
TOSHIBA |
| 39 |
APPLICATION-NOTE |
Typical Application of 3SK88 to UHF tuner RF Amplifier |
NEC |
| 40 |
APPLICATION-NOTE |
Typical application of 3SK74 to VHF tuner RF amplifier |
NEC |
| 41 |
APPLICATION-NOTE |
Typical Application of 3SK74 to VHF tuner mixer |
NEC |
| 42 |
APPLICATION-NOTE |
Typical Application of 3SK87 to UHF Tuner RF Amplifier |
NEC |
| 43 |
APPLICATION-NOTE |
Typical Application of 2SC2353 for UHF TV Tuner Mixer |
NEC |
| 44 |
APPLICATION-NOTE |
Typical application of 2SC2352 to VHF Tuner mixer circuit of high conversion Gain - application note |
NEC |
| 45 |
APPLICATION-NOTE |
Plastic Mold-Packeged low-noise microwave transistors for consumer microwave, application of 2SC3355 series |
NEC |
| 46 |
APPLICATION-NOTE |
High-Frequency Low Noise transistors for VHF-and UHF band application of 2SC2570A |
NEC |
| 47 |
APT10043 |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
Advanced Power Technology |
| 48 |
APT10M07 |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
Advanced Power Technology |
| 49 |
APT10M25 |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
Advanced Power Technology |
| 50 |
APT1201R6 |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
Advanced Power Technology |
| 51 |
APT20M22 |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
Advanced Power Technology |
| 52 |
APT30M85 |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
Advanced Power Technology |
| 53 |
APT5010B2 |
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS. |
Advanced Power Technology |
| 54 |
APT5014 |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
Advanced Power Technology |
| 55 |
APT5015 |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
Advanced Power Technology |
| 56 |
APT5016 |
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS |
Advanced Power Technology |
| 57 |
APT5017 |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
Advanced Power Technology |
| 58 |
APT5020 |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
Advanced Power Technology |
| 59 |
APT5027 |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs |
Advanced Power Technology |
| 60 |
APT50M50 |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
Advanced Power Technology |
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