| No. |
Part Name |
Description |
Manufacturer |
| 31 |
28C256ATM-1 |
High speed 120 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
| 32 |
28C256ATM-2 |
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns. |
Turbo IC |
| 33 |
28C256ATM-2 |
High speed 150 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
| 34 |
28C256ATM-3 |
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. |
Turbo IC |
| 35 |
28C256ATM-3 |
High speed 200 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
| 36 |
28C256ATM-4 |
High speed 250 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
| 37 |
28C256ATM-4 |
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. |
Turbo IC |
| 38 |
28C64 |
64K 8K x 8 CMOS E2PROM |
Atmel |
| 39 |
29C010 |
1 Megabit 128K x 8 5-volt Only CMOS Flash Memory |
Atmel |
| 40 |
29C010A |
1 Megabit 128K x 8 5-volt Only CMOS Flash Memory |
Atmel |
| 41 |
29C020 |
2-Megabit 256K x 8 5-volt Only CMOS Flash Memory |
Atmel |
| 42 |
29C040 |
4-Megabit 512K x 8 5-volt Only 256-Byte Sector CMOS Flash Memory |
Atmel |
| 43 |
29C256 |
256K 32K x 8 5-volt Only CMOS Flash Memory |
Atmel |
| 44 |
29C512 |
512K 64K x 8 5-volt Only CMOS Flash Memory |
Atmel |
| 45 |
29C516E |
16-Bit Flow Through EDAC Error Detection And Correction unit |
Atmel |
| 46 |
2SC388ATM |
Silicon NPN transistor for TV final picture IF amplifier applications |
TOSHIBA |
| 47 |
2SK30ATM |
Field Effect Transistor Silicon N Channel Junction Type Low Noise Pre-Amplifier, Tone Control Amplifier and DC-AC High Input Impedance Amplifier Circuit Applications |
TOSHIBA |
| 48 |
45DB011B |
1-Megabit 2.7-volt Only Serial DataFlash |
Atmel |
| 49 |
45DB041B |
4-megabit 2.5-volt Only or 2.7-volt Only DataFlash |
Atmel |
| 50 |
45DB081B |
AT-45DB081B DATA FLASH RELIABILITY DATA |
Atmel |
| 51 |
49F010 |
1-Megabit 128K x 8 5-volt Only CMOS Flash Memory |
Atmel |
| 52 |
5962-0325001QXC |
Rad hard reprogrammable FPGA with FreeRAM. |
Atmel |
| 53 |
5962-0325001QYC |
Rad hard reprogrammable FPGA with FreeRAM. |
Atmel |
| 54 |
5962-0325001VXC |
Rad hard reprogrammable FPGA with FreeRAM. |
Atmel |
| 55 |
5962-0325001VYC |
Rad hard reprogrammable FPGA with FreeRAM. |
Atmel |
| 56 |
5962-87539013X |
t(pd): 25ns; t(s): 15ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 57 |
5962-8753901LA |
t(pd): 25ns; t(s): 15ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 58 |
5962-87539053X |
t(pd): 25ns; t(s): 15ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 59 |
5962-8753905LA |
t(pd): 25ns; t(s): 15ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 60 |
5962-8863401UX |
256 (32K x 8) high speed parallel EEPROM, 120ns |
Atmel |
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