No. |
Part Name |
Description |
Manufacturer |
31 |
49F010 |
1-Megabit 128K x 8 5-volt Only CMOS Flash Memory |
Atmel |
32 |
5962-0325001QXC |
Rad hard reprogrammable FPGA with FreeRAM. |
Atmel |
33 |
5962-0325001QYC |
Rad hard reprogrammable FPGA with FreeRAM. |
Atmel |
34 |
5962-0325001VXC |
Rad hard reprogrammable FPGA with FreeRAM. |
Atmel |
35 |
5962-0325001VYC |
Rad hard reprogrammable FPGA with FreeRAM. |
Atmel |
36 |
5962-87539013X |
t(pd): 25ns; t(s): 15ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
37 |
5962-8753901LA |
t(pd): 25ns; t(s): 15ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
38 |
5962-87539053X |
t(pd): 25ns; t(s): 15ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
39 |
5962-8753905LA |
t(pd): 25ns; t(s): 15ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
40 |
5962-8863401UX |
256 (32K x 8) high speed parallel EEPROM, 120ns |
Atmel |
41 |
5962-8863401XX |
256 (32K x 8) high speed parallel EEPROM, 120ns |
Atmel |
42 |
5962-8863401YX |
256 (32K x 8) high speed parallel EEPROM, 120ns |
Atmel |
43 |
5962-8863401ZX |
256 (32K x 8) high speed parallel EEPROM, 120ns |
Atmel |
44 |
5962-8863402UX |
256 (32K x 8) high speed parallel EEPROM, 120ns |
Atmel |
45 |
5962-8863402XX |
256 (32K x 8) high speed parallel EEPROM, 120ns |
Atmel |
46 |
5962-8863402YX |
256 (32K x 8) high speed parallel EEPROM, 120ns |
Atmel |
47 |
5962-8863402ZX |
256 (32K x 8) high speed parallel EEPROM, 120ns |
Atmel |
48 |
5962-8863403UX |
256 (32K x 8) high speed parallel EEPROM, 90ns |
Atmel |
49 |
5962-8863403XX |
256 (32K x 8) high speed parallel EEPROM, 90ns |
Atmel |
50 |
5962-8863403YX |
256 (32K x 8) high speed parallel EEPROM, 90ns |
Atmel |
51 |
5962-8863403ZX |
256 (32K x 8) high speed parallel EEPROM, 90ns |
Atmel |
52 |
5962-8863404UX |
256 (32K x 8) high speed parallel EEPROM, 90ns |
Atmel |
53 |
5962-8863404XX |
256 (32K x 8) high speed parallel EEPROM, 90ns |
Atmel |
54 |
5962-8863404YX |
256 (32K x 8) high speed parallel EEPROM, 90ns |
Atmel |
55 |
5962-8863404ZX |
256 (32K x 8) high speed parallel EEPROM, 90ns |
Atmel |
56 |
5962-88670013X |
t(pd): 25ns; t(s): 15ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
57 |
5962-8867001LA |
t(pd): 25ns; t(s): 15ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
58 |
5962-88670053X |
t(pd): 25ns; t(s): 15ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
59 |
5962-8867005LA |
t(pd): 25ns; t(s): 15ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
60 |
5962-88724013X |
t(pd): 25ns; t(s): 18ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
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