| No. |
Part Name |
Description |
Manufacturer |
| 31 |
D48A |
48 Lead Ceramic Sidebrazed Dual-in-Line Package |
National Semiconductor |
| 32 |
D52A |
52 Lead Ceramic Sidebrazed Dual-in-Line Package |
National Semiconductor |
| 33 |
DA32A |
32-Lead Ceramic (0.400 Centers) Sidebrazed Dual-In-Line Package |
National Semiconductor |
| 34 |
DA32B |
32-Lead Ceramic (0.600 Centers) Sidebraze Dual-In-Line Package Module |
National Semiconductor |
| 35 |
DC-24C |
SIZE-BRAZED DIP DC24C Packaging Information |
Hitachi Semiconductor |
| 36 |
DC-28B |
SIZE-BRAZED DIP DC28B Packaging Information |
Hitachi Semiconductor |
| 37 |
DC40 |
40 LEAD (SIDE BRAZED) DIL PACKAGE |
PLESSEY Semiconductors |
| 38 |
DMC16230NYU-LY-AZE-EA |
16characters x 2lines; 5x7dots + cursor (1character); 0.3-7.0V; 1.8mA LCD module |
Optrex Corporation |
| 39 |
ENW49A01AZEF |
Wi-Fi Embedded - PAN93x0 |
Panasonic |
| 40 |
ENWF9101AZEF |
Wi-Fi Radio - PAN9020 |
Panasonic |
| 41 |
HGR . . . |
Standard Metal Glaze Resistors, Stable metal glaze film on ceramic substrate |
Vishay |
| 42 |
HGR . . . |
Standard Metal Glaze Resistors, Stable metal glaze film on ceramic substrate |
Vishay |
| 43 |
IS82C600-10B |
Trailblazer High-speed SRAM with address decoding and ready logic |
Integrated Silicon Solution Inc |
| 44 |
IS82C600-10BI |
Trailblazer High-speed SRAM with address decoding and ready logic |
Integrated Silicon Solution Inc |
| 45 |
IS82C600-8B |
Trailblazer High-speed SRAM with address decoding and ready logic |
Integrated Silicon Solution Inc |
| 46 |
IS82C600-8BI |
Trailblazer High-speed SRAM with address decoding and ready logic |
Integrated Silicon Solution Inc |
| 47 |
IS82C600-9B |
Trailblazer High-speed SRAM with address decoding and ready logic |
Integrated Silicon Solution Inc |
| 48 |
IS82C600-9BI |
Trailblazer High-speed SRAM with address decoding and ready logic |
Integrated Silicon Solution Inc |
| 49 |
J1 PACKAGE |
64 Pin Hermetic Ceramic DIP Bootombraze with Heat Sink |
TRW |
| 50 |
J3 PACKAGE |
64 Pin Hermetic Ceramic DIP Bottombraze |
TRW |
| 51 |
MAX6725KAZED3-T |
Vcc1: 2.313 V, Vcc2: 0.833 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
| 52 |
MAX6726KAZED3-T |
Vcc1: 2.313 V, Vcc2: 0.833 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
| 53 |
MAX6727KAZED3-T |
Vcc1: 2.313 V, Vcc2: 0.833 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
| 54 |
MAX6728KAZED3-T |
Vcc1: 2.313 V, Vcc2: 0.833 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
| 55 |
MAX6729KAZED3+ |
Dual/Triple Ultra-Low-Voltage SOT23 µP Supervisory Circuits |
MAXIM - Dallas Semiconductor |
| 56 |
MAX6729KAZED3-T |
Vcc1: 2.313 V, Vcc2: 0.833 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
| 57 |
MAZE062D |
Composite Device - Diodes - Zener Diodes Composite Elements |
Panasonic |
| 58 |
MAZE062DG |
Silicon planar type |
Panasonic |
| 59 |
MKT-D14D |
DIP, SIDEBRAZED CERAMIC 14 LEAD |
National Semiconductor |
| 60 |
MRC1/2 |
Metal Glaze Cylindrical SM Resistors |
International Resistive |
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