| No. |
Part Name |
Description |
Manufacturer |
| 31 |
QEB100-48S3P3-P |
Input range:36-75 VDC;output voltage:3.3 VDC; output current:25 A; 100 W single output DC-DC converter |
Power Mate Technology |
| 32 |
QEB100-48S3P3-S |
Input range:36-75 VDC;output voltage:3.3 VDC; output current:25 A; 100 W single output DC-DC converter |
Power Mate Technology |
| 33 |
SB100-04J |
Schottky barrier diode, 40V/10A rectifier |
SANYO |
| 34 |
SB100-05H |
Schottky Barrier Diode (Twin Type � Cathode Common) 50V,10A Rectifier |
SANYO |
| 35 |
SB100-05J |
50V, 10A Rectifier Schottky Barrier Diode (Twin Type � Cathode Common) |
SANYO |
| 36 |
SB100-09 |
90V, 10A Rectifier Schottky Barrier Diode (Twin Type � Cathode Common) |
SANYO |
| 37 |
SB100-09J |
90V, 10A Rectifier Schottky Barrier Diode (Twin Type � Cathode Common) |
SANYO |
| 38 |
SB100-09K |
Schottky Barrier Diode (Twin Type � Cathode Common) 90V, 10A Rectifier |
SANYO |
| 39 |
SB100-18 |
180V, 10A Rectifier Schottky Barrier Diode (Twin Type � Cathode Common) |
SANYO |
| 40 |
VHB100-12 |
NPN SILICON RF POWER TRANSISTOR |
Advanced Semiconductor |
| 41 |
VLB100-12 |
NPN SILICON RF POWER TRANSISTOR |
Advanced Semiconductor |
| 42 |
VMB100-12 |
NPN SILICON RF POWER TRANSISTOR |
Advanced Semiconductor |
| | | |
