| No. |
Part Name |
Description |
Manufacturer |
| 31 |
M28W640ECB10N6E |
64 Mbit 4Mb x16/ Boot Block 3V Supply Flash Memory |
ST Microelectronics |
| 32 |
M28W640ECB10N6F |
64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory |
SGS Thomson Microelectronics |
| 33 |
M28W640ECB10N6F |
64 Mbit 4Mb x16/ Boot Block 3V Supply Flash Memory |
ST Microelectronics |
| 34 |
M28W640ECB10N6T |
64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory |
SGS Thomson Microelectronics |
| 35 |
M28W640ECB10N6T |
64 Mbit 4Mb x16/ Boot Block 3V Supply Flash Memory |
ST Microelectronics |
| 36 |
M28W800BB10N1T |
8 Mbit 512Kb x16, Boot Block 3V Supply Flash Memory |
SGS Thomson Microelectronics |
| 37 |
M28W800BB10N1T |
8 Mbit 512Kb x16/ Boot Block 3V Supply Flash Memory |
ST Microelectronics |
| 38 |
M28W800BB10N6T |
8 Mbit 512Kb x16, Boot Block 3V Supply Flash Memory |
SGS Thomson Microelectronics |
| 39 |
M28W800BB10N6T |
8 Mbit 512Kb x16/ Boot Block 3V Supply Flash Memory |
ST Microelectronics |
| 40 |
MHPM6B10N120 |
Hybrid Power Module |
Motorola |
| 41 |
MHPM6B10N120SL |
Hybrid Power Module |
Motorola |
| 42 |
MHPM6B10N120SS |
Hybrid Power Module |
Motorola |
| 43 |
MTB10N40E |
TMOS POWER FET 10 AMPERES |
Motorola |
| 44 |
MTB10N40E |
10 Amp D2PAK Surface Mount Products, N-Channel, VDSS 400 |
ON Semiconductor |
| 45 |
MTB10N40E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 46 |
MTB10N60E7 |
TMOS 7 E-FET™ High Energy Power FET |
ON Semiconductor |
| 47 |
MTB10N60E7-D |
TMOS 7 E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 48 |
MTB10N60E7T4 |
TMOS 7 E-FET™ High Energy Power FET |
ON Semiconductor |
| 49 |
PHB10N40 |
PowerMOS transistor |
Philips |
| 50 |
SGB10N60A |
IGBTs & DuoPacks - 10A 600V TO263AB SMD IGBT |
Infineon |
| 51 |
SKB10N60A |
IGBTs & DuoPacks - 10A 600V TO263AB SMD IGBT+Diode |
Infineon |
| 52 |
SPB10N10 |
N-Channel SIPMOS Power Transistor |
Infineon |
| 53 |
SPB10N10 |
Low Voltage MOSFETs - Power MOSFET, 100V, D�PAK, RDSon=180mOhm, 10A, NL |
Infineon |
| 54 |
SPB10N10L |
Power MOSFET, 100V, D²PAK, RDSon=154mOhm, 10A, LL |
Infineon |
| 55 |
STB10N60M2 |
N-channel 600 V, 0.55 Ohm typ., 7.5 A MDmesh II Plus(TM) low Qg Power MOSFET in D2PAK package |
ST Microelectronics |
| 56 |
STB10N65K3 |
N-channel 650 V, 0.75 Ohm typ., 10 A Zener-protected SuperMESH3(TM) Power MOSFET in D2PAK package |
ST Microelectronics |
| 57 |
STB10N95K5 |
N-channel 950 V, 0.65 Ohm typ., 8 A Zener-protected SuperMESH(TM) 5 Power MOSFET in D2PAK package |
ST Microelectronics |
| 58 |
STB10NA40 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
SGS Thomson Microelectronics |
| 59 |
STB10NA40 |
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
| 60 |
STB10NA40 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
ST Microelectronics |
| | | |
