| No. |
Part Name |
Description |
Manufacturer |
| 31 |
AT45DB161B-RI |
16 MEGABIT 2.5-VOLT ONLY OR 2.7-VOLT ONLY DATAFLASH |
Atmel |
| 32 |
AT45DB161B-RU |
16 MEGABIT 2.5-VOLT ONLY OR 2.7-VOLT ONLY DATAFLASH |
Atmel |
| 33 |
AT45DB161B-TC |
16 MEGABIT 2.5-VOLT ONLY OR 2.7-VOLT ONLY DATAFLASH |
Atmel |
| 34 |
AT45DB161B-TC-2.5 |
16 MEGABIT 2.5-VOLT ONLY OR 2.7-VOLT ONLY DATAFLASH |
Atmel |
| 35 |
AT45DB161B-TI |
16 MEGABIT 2.5-VOLT ONLY OR 2.7-VOLT ONLY DATAFLASH |
Atmel |
| 36 |
AT45DB161B-TU |
16 MEGABIT 2.5-VOLT ONLY OR 2.7-VOLT ONLY DATAFLASH |
Atmel |
| 37 |
ATV06B161J-G |
Transient Voltage Suppressor (TVS), PPPM=600Watts, VRWM=160V, Tolerance=5% |
Comchip Technology |
| 38 |
ATV06B161J-HF |
Halogen Free Transient Voltage Suppressor (TVS) Diodes, PPPM=600Watts, VRWM=160V, Tolerance=5% |
Comchip Technology |
| 39 |
ATV06B161JB-G |
Transient Voltage Suppressor (TVS), PPPM=600Watts, VRWM=160V, Tolerance=5% |
Comchip Technology |
| 40 |
ATV06B161JB-HF |
Halogen Free Transient Voltage Suppressor (TVS) Diodes, PPPM=600Watts, VRWM=160V, Tolerance=5% |
Comchip Technology |
| 41 |
CXK5B16120J |
65536-word X 16-bit High Speed Bi-CMOS Static RAM |
SONY |
| 42 |
CXK5B16120J-12 |
65536-word X 16-bit High Speed Bi-CMOS Static RAM |
SONY |
| 43 |
CXK5B16120J/TM-12 |
65536-word x 16-bit High Speed Bi-CMOS Static RAM |
SONY |
| 44 |
CXK5B16120TM-12 |
65536-word X 16-bit High Speed Bi-CMOS Static RAM |
SONY |
| 45 |
ERA1AEB161C |
High Precision Thin Film Chip Resistors, High Reliability Type |
Panasonic |
| 46 |
ERA2AEB161X |
High Precision Thin Film Chip Resistors, High Reliability Type |
Panasonic |
| 47 |
ERA3AEB161V |
High Precision Thin Film Chip Resistors, High Reliability Type |
Panasonic |
| 48 |
ERA6AEB161V |
High Precision Thin Film Chip Resistors, High Reliability Type |
Panasonic |
| 49 |
ERA8AEB161V |
High Precision Thin Film Chip Resistors, High Reliability Type |
Panasonic |
| 50 |
K7B161825A |
512Kx36 & 1Mx18 Synchronous SRAM |
Samsung Electronic |
| 51 |
K7B163625A K7B163225A K7B161825A |
512Kx36/x32 & 1Mx18-Bit Synchronous Burst SRAM Data Sheet |
Samsung Electronic |
| 52 |
LB1617M |
3-Phase Brushless Motor Driver |
SANYO |
| 53 |
LB1619 |
3-Phase Brushless Motor Driver |
SANYO |
| 54 |
LB1619M |
3-Phase Brushless Motor Driver |
SANYO |
| 55 |
M5M29GB161BVP |
16777216-bit CMOS 3.3V-only, block erase flash memory |
Mitsubishi Electric Corporation |
| 56 |
M5M29GB161BWG |
16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
Mitsubishi Electric Corporation |
| 57 |
M5M29GB161BWG |
16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
Mitsubishi Electric Corporation |
| 58 |
MA2B161 |
Silicon epitaxial planar type |
Panasonic |
| 59 |
MURB1610CT |
Fast / Super-Fast / Ultra-Fast Recovery Rectifiers |
Diodes |
| 60 |
MURB1610CT |
16 Amp Super Fast Recovery Rectifier 50 to 600 Volts |
MCC |
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