| No. |
Part Name |
Description |
Manufacturer |
| 31 |
AM29SL800BB170WBCB |
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory |
Advanced Micro Devices |
| 32 |
AM29SL800BB170WBI |
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory |
Advanced Micro Devices |
| 33 |
AM29SL800BB170WBIB |
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory |
Advanced Micro Devices |
| 34 |
ATV06B170J-G |
Transient Voltage Suppressor (TVS), PPPM=600Watts, VRWM=17V, Tolerance=5% |
Comchip Technology |
| 35 |
ATV06B170J-HF |
Halogen Free Transient Voltage Suppressor (TVS) Diodes, PPPM=600Watts, VRWM=17V, Tolerance=5% |
Comchip Technology |
| 36 |
ATV06B170JB-G |
Transient Voltage Suppressor (TVS), PPPM=600Watts, VRWM=17V, Tolerance=5% |
Comchip Technology |
| 37 |
ATV06B170JB-HF |
Halogen Free Transient Voltage Suppressor (TVS) Diodes, PPPM=600Watts, VRWM=17V, Tolerance=5% |
Comchip Technology |
| 38 |
B170 |
Schottky Rectifiers |
Diodes |
| 39 |
B170 |
1A high voltage schottky barrier rectifier, 70V |
TRANSYS Electronics Limited |
| 40 |
B170-13-F |
Schottky Rectifiers |
Diodes |
| 41 |
B170B |
Schottky Rectifiers |
Diodes |
| 42 |
B170B |
1A high voltage schottky barrier rectifier, 70V |
TRANSYS Electronics Limited |
| 43 |
B170B-13-F |
Schottky Rectifiers |
Diodes |
| 44 |
B170_B |
70V; 1.0A high voltage schottky barrier rectifier. For use in low voltage, high frequency inverters, free wheeling and polarity protection application |
Diodes |
| 45 |
BB170 |
VHF variable capacitance diode |
NXP Semiconductors |
| 46 |
BSM100GB170DN2 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
| 47 |
BSM150GB170DN2 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
| 48 |
BSM150GB170DN2E3166 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Enlarged diode area) |
Siemens |
| 49 |
BSM200GB170DLC |
Technical Information |
Eupec GmbH |
| 50 |
BSM50GB170DN2 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
| 51 |
BSM75GB170DN2 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
| 52 |
MA2B170 |
Small-signal device - Diodes - Swicthing Diodes |
Panasonic |
| 53 |
NSB1706DMW5T1 |
Dual Bias Resistor Transistor |
ON Semiconductor |
| 54 |
P6SMB170 |
Plastic surface mount zener overvoltage transient suppressor. Nom breakdown voltage 170V. 600W peak power, 3.0W steady state. |
Motorola |
| 55 |
P6SMB170 |
TVS: Unidirectional |
Taiwan Semiconductor |
| 56 |
P6SMB170A |
UNI-DIRECTIONAL GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR 600 WATTS, 6.8 THRU 200 VOLTS |
Central Semiconductor |
| 57 |
P6SMB170A |
Plastic surface mount zener overvoltage transient suppressor. Nom breakdown voltage 170V. 600W peak power, 3.0W steady state. |
Motorola |
| 58 |
P6SMB170A |
TVS: Unidirectional |
Taiwan Semiconductor |
| 59 |
P6SMB170C |
TVS: Bidirectional |
Taiwan Semiconductor |
| 60 |
P6SMB170CA |
BI-DIRECTIONAL GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR 600 WATTS, 6.8 THRU 200 VOLTS |
Central Semiconductor |
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