| No. |
Part Name |
Description |
Manufacturer |
| 31 |
2SB757 |
Silicon PNP Power Transistors TO-3PN package |
Savantic |
| 32 |
2SB759 |
Si PNP epitaxial planar. General amplifier. |
Panasonic |
| 33 |
2SB759A |
Si PNP epitaxial planar. General amplifier. |
Panasonic |
| 34 |
2SB75A |
Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Small Signal Amplifier |
Hitachi Semiconductor |
| 35 |
2SB75AH |
Germanium PNP Alloyed Junction Transistor, intended for use in Low Speed Switching, Audio Frequency Small Signal Amplifier |
Hitachi Semiconductor |
| 36 |
2SB75H |
Germanium PNP Alloyed Junction Transistor, intended for use in Low Speed Switching, Audio Frequency Small Signal Amplifier |
Hitachi Semiconductor |
| 37 |
2SD845 |
Silicon NPN triple diffused power transistor, complementary to 2SB755 |
TOSHIBA |
| 38 |
AH31-PCB75 |
High Dynamic Range IF Amplifier |
WJ Communications |
| 39 |
AM29F160DB75 |
16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory |
Advanced Micro Devices |
| 40 |
AM29F160DB75EC |
16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory |
Advanced Micro Devices |
| 41 |
AM29F160DB75EI |
16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory |
Advanced Micro Devices |
| 42 |
AM29F160DB75FC |
16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory |
Advanced Micro Devices |
| 43 |
AM29F160DB75FI |
16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory |
Advanced Micro Devices |
| 44 |
ATV06B750J-G |
Transient Voltage Suppressor (TVS), PPPM=600Watts, VRWM=75V, Tolerance=5% |
Comchip Technology |
| 45 |
ATV06B750J-HF |
Halogen Free Transient Voltage Suppressor (TVS) Diodes, PPPM=600Watts, VRWM=75V, Tolerance=5% |
Comchip Technology |
| 46 |
ATV06B750JB-G |
Transient Voltage Suppressor (TVS), PPPM=600Watts, VRWM=75V, Tolerance=5% |
Comchip Technology |
| 47 |
ATV06B750JB-HF |
Halogen Free Transient Voltage Suppressor (TVS) Diodes, PPPM=600Watts, VRWM=75V, Tolerance=5% |
Comchip Technology |
| 48 |
B7506-01 |
Infrared detector module with preamp |
Hamamatsu Corporation |
| 49 |
BLM15BB750SN1 |
On-Board Type (DC) EMI Suppression Filters |
muRata |
| 50 |
BLM18BB750SN1 |
On-Board Type (DC) EMI Suppression Filters |
muRata |
| 51 |
BLM21BB750SN1 |
On-Board Type (DC) EMI Suppression Filters |
muRata |
| 52 |
BZB84-B75 |
Dual Zener diodes |
Nexperia |
| 53 |
BZB84-B75 |
Dual Zener diodes |
NXP Semiconductors |
| 54 |
BZM55B75 |
Silicon Epitaxial Planar Z-Diodes |
Vishay |
| 55 |
BZT52-B75 |
Single Zener diodes in a SOD123 package |
Nexperia |
| 56 |
BZT52B75 |
ZENER DIODES |
Micro Commercial Components |
| 57 |
BZT52B75 |
Discrete Devices-Diode-Zener Diode & Array |
Taiwan Semiconductor |
| 58 |
BZT52B75S |
ZENER DIODES |
Micro Commercial Components |
| 59 |
BZT52B75S |
Discrete Devices-Diode-Zener Diode & Array |
Taiwan Semiconductor |
| 60 |
BZT52H-B75 |
Single Zener diodes in a SOD123F package |
Nexperia |
| | | |
