| No. |
Part Name |
Description |
Manufacturer |
| 31 |
ERA8AEB8870V |
High Precision Thin Film Chip Resistors, High Reliability Type |
Panasonic |
| 32 |
ERA8AEB8871V |
High Precision Thin Film Chip Resistors, High Reliability Type |
Panasonic |
| 33 |
ERA8AEB8872V |
High Precision Thin Film Chip Resistors, High Reliability Type |
Panasonic |
| 34 |
ERA8AEB8873V |
High Precision Thin Film Chip Resistors, High Reliability Type |
Panasonic |
| 35 |
ERA8APB8870V |
High Precision Thin Film Chip Resistors, High Reliability Type |
Panasonic |
| 36 |
ERA8APB8871V |
High Precision Thin Film Chip Resistors, High Reliability Type |
Panasonic |
| 37 |
ERA8APB8872V |
High Precision Thin Film Chip Resistors, High Reliability Type |
Panasonic |
| 38 |
ERA8ARB8871V |
High Precision Thin Film Chip Resistors, High Reliability Type |
Panasonic |
| 39 |
ERA8ARB8872V |
High Precision Thin Film Chip Resistors, High Reliability Type |
Panasonic |
| 40 |
ERJPB3B8870V |
High Precision Thick Film Chip Resistors |
Panasonic |
| 41 |
ERJPB3B8871V |
High Precision Thick Film Chip Resistors |
Panasonic |
| 42 |
ERJPB3B8872V |
High Precision Thick Film Chip Resistors |
Panasonic |
| 43 |
ERJPB6B8870V |
High Precision Thick Film Chip Resistors |
Panasonic |
| 44 |
ERJPB6B8871V |
High Precision Thick Film Chip Resistors |
Panasonic |
| 45 |
ERJPB6B8872V |
High Precision Thick Film Chip Resistors |
Panasonic |
| 46 |
ERJPB6B8873V |
High Precision Thick Film Chip Resistors |
Panasonic |
| 47 |
FDB8870 |
30V N-Channel PowerTrench MOSFET |
Fairchild Semiconductor |
| 48 |
FDB8870_F085 |
30V N-Channel PowerTrench� MOSFET |
Fairchild Semiconductor |
| 49 |
FDB8870_NL |
30V N-Channel PowerTrench MOSFET |
Fairchild Semiconductor |
| 50 |
FDB8874 |
30V N-Channel PowerTrench MOSFET |
Fairchild Semiconductor |
| 51 |
FDB8874_NL |
30V N-Channel PowerTrench MOSFET |
Fairchild Semiconductor |
| 52 |
NX8562LB887-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (20 mW min). ITU-T wavelength 1588.72 nm. Frequency 188.70 THz. Anode ground. FC-PC connector. |
NEC |
| 53 |
NX8563LB887-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1588.72 nm. Frequency 188.70 THz. FC-PC connector. Anode ground. |
NEC |
| 54 |
PMB8875 |
S-GOLDlite- Advanced Single - Chip GSM/GPRS Baseband Controller |
Infineon |
| 55 |
PMB8876 |
S-GOLD2-Multimedia Engine with Advanced EDGE Modem Functionality |
Infineon |
| | | |
