| No. |
Part Name |
Description |
Manufacturer |
| 31 |
BF998 |
N-Channel Dual Gate MOS‐Fieldeffect Tetrode, Depletion Mode |
Vishay |
| 32 |
BF998A |
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode |
Vishay |
| 33 |
BF998B |
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode |
Vishay |
| 34 |
BF998R |
RF-MOSFET - VDS=8V, gfs=24mS, Gps=28dB, F=1dB |
Infineon |
| 35 |
BF998R |
N-channel dual-gate MOSFET |
NXP Semiconductors |
| 36 |
BF998R |
Silicon N-channel dual-gate MOS-FETs |
Philips |
| 37 |
BF998R |
Silicon N-Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor) |
Siemens |
| 38 |
BF998R |
N-Channel Dual Gate MOS‐Fieldeffect Tetrode, Depletion Mode |
Vishay |
| 39 |
BF998RA |
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode |
Vishay |
| 40 |
BF998RAW |
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode |
Vishay |
| 41 |
BF998RB |
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode |
Vishay |
| 42 |
BF998RBW |
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode |
Vishay |
| 43 |
BF998RW |
N-Channel Dual Gate MOS‐Fieldeffect Tetrode, Depletion Mode |
Vishay |
| 44 |
BF998W |
Silicon N-Channel MOSFET Tetrode |
Infineon |
| 45 |
BF998W |
Silicon N-Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor) |
Siemens |
| 46 |
BF998WR |
N-channel dual-gate MOSFET |
NXP Semiconductors |
| 47 |
BF998WR |
N-channel dual-gate MOS-FET |
Philips |
| 48 |
BF999 |
Silicon N-Channel MOSFET Triode |
Infineon |
| 49 |
BF999 |
RF-MOSFET - VDS=15V, gfs=16mS, Gp=25dB, F=1dB |
Infineon |
| 50 |
BF999 |
Silicon N Channel MOSFET Triode (For high-frequency stages up to 300 MHz, preferably in FM applications) |
Siemens |
| | | |
