No. |
Part Name |
Description |
Manufacturer |
31 |
APE7312 |
very low cost voice and melody synthesizer with 4-bits CPU |
Aplus Integrated Circuits |
32 |
APE8412 |
very low cost voice and melody synthesizer with 4-bits CPU |
Aplus Integrated Circuits |
33 |
APE8416 |
very low cost voice and melody synthesizer with 4-bits CPU |
Aplus Integrated Circuits |
34 |
APEXX04 |
very low cost voice and melody synthesizer with 4-bits CPU |
Aplus Integrated Circuits |
35 |
APEXX08 |
very low cost voice and melody synthesizer with 4-bits CPU |
Aplus Integrated Circuits |
36 |
APEXX12 |
very low cost voice and melody synthesizer with 4-bits CPU |
Aplus Integrated Circuits |
37 |
APEXX16 |
very low cost voice and melody synthesizer with 4-bits CPU |
Aplus Integrated Circuits |
38 |
APEXX24 |
very low cost voice and melody synthesizer with 4-bits CPU |
Aplus Integrated Circuits |
39 |
LC3516 |
2048 WORDS x8 BITS CMOS STATIC RAM |
SANYO |
40 |
LC3516D |
2048 WORDS x8 BITS CMOS STATIC RAM |
SANYO |
41 |
LC3516L |
2048 WORDS x8 BITS CMOS STATIC RAM |
SANYO |
42 |
LC3517 |
2048 WORDS x8 BITS CMOS STATIC RAM |
SANYO |
43 |
LC3517D |
2048 WORDS x8 BITS CMOS STATIC RAM |
SANYO |
44 |
LC3517L |
2048 WORDS x8 BITS CMOS STATIC RAM |
SANYO |
45 |
TC55465AJ-15 |
15ns; 120mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM |
TOSHIBA |
46 |
TC55465AJ-20 |
20ns; 100mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM |
TOSHIBA |
47 |
TC55465AJ-25 |
25ns; 100mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM |
TOSHIBA |
48 |
TC55465AJ-35 |
35ns; 100mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM |
TOSHIBA |
49 |
TC55465AP-20 |
20ns; 120mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM |
TOSHIBA |
50 |
TC55465AP-25 |
25ns; 120mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM |
TOSHIBA |
51 |
TC55465AP-35 |
35ns; 120mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM |
TOSHIBA |
52 |
TC57512AD-15 |
65,536 WORDS x 8 BITS CMOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY |
etc |
53 |
TC57512AD-15 |
150ns; V(cc): -0.6 to +7V; 1.5W; 65,536 words x 8 bits CMOS UV erasable and electrically programmable read only memory |
TOSHIBA |
54 |
TC57512AD-20 |
65,536 WORDS x 8 BITS CMOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY |
etc |
55 |
TC57512AD-20 |
200ns; V(cc): -0.6 to +7V; 1.5W; 65,536 words x 8 bits CMOS UV erasable and electrically programmable read only memory |
TOSHIBA |
56 |
TDC1030 |
64 Words by 9 Bits Cascadable |
TRW |
57 |
THC63LVD104 |
90MHz 30Bits COLOR LVDS Receiver |
etc |
58 |
THC63LVD104A |
90MHz 30Bits COLOR LVDS Receiver |
etc |
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