No. |
Part Name |
Description |
Manufacturer |
31 |
1032E-70LTI |
High-Density Programmable Logic |
Lattice Semiconductor |
32 |
1032E-80LJ |
High-Density Programmable Logic |
Lattice Semiconductor |
33 |
1032E-80LT |
High-Density Programmable Logic |
Lattice Semiconductor |
34 |
1032E-90LJ |
High-Density Programmable Logic |
Lattice Semiconductor |
35 |
1032E-90LT |
High-Density Programmable Logic |
Lattice Semiconductor |
36 |
1032E1111 |
High-Density Programmable Logic |
Lattice Semiconductor |
37 |
1032EA |
In-System Programmable High Density PLD |
Lattice Semiconductor |
38 |
1048C |
In-System Programmable High Density PLD |
Lattice Semiconductor |
39 |
1048EA |
In-System Programmable High Density PLD |
Lattice Semiconductor |
40 |
106 |
Wire Bondable Chip Inductors |
American Precision |
41 |
10710A |
10710A Adjustable Mount |
Agilent (Hewlett-Packard) |
42 |
10710B |
10710B Adjustable Mount |
Agilent (Hewlett-Packard) |
43 |
10711A |
10711A Adjustable Mount |
Agilent (Hewlett-Packard) |
44 |
10H20EV8 |
ECL programmable array logic |
Philips |
45 |
10H20EV8-4A |
ECL programmable array logic |
Philips |
46 |
10H20EV8-4F |
ECL programmable array logic |
Philips |
47 |
10KE |
Embedded Programmable Logic Device |
Altera Corporation |
48 |
10SI05 |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, cathode to case 10A 50V |
IPRS Baneasa |
49 |
10SI05R |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, anode to case 10A 50V |
IPRS Baneasa |
50 |
10SI1 |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, cathode to case 10A 100V |
IPRS Baneasa |
51 |
10SI10 |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, cathode to case 10A 1000V |
IPRS Baneasa |
52 |
10SI10R |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, anode to case 10A 1000V |
IPRS Baneasa |
53 |
10SI12 |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, cathode to case 10A 1200V |
IPRS Baneasa |
54 |
10SI12R |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, anode to case 10A 1200V |
IPRS Baneasa |
55 |
10SI1R |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, anode to case 10A 100V |
IPRS Baneasa |
56 |
10SI2 |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, cathode to case 10A 200V |
IPRS Baneasa |
57 |
10SI2R |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, anode to case 10A 200V |
IPRS Baneasa |
58 |
10SI3 |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, cathode to case 10A 300V |
IPRS Baneasa |
59 |
10SI3R |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, anode to case 10A 300V |
IPRS Baneasa |
60 |
10SI4 |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, cathode to case 10A 400V |
IPRS Baneasa |
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