| No. |
Part Name |
Description |
Manufacturer |
| 31 |
AM29LV010BT-45RFEB |
1 Megabit (128 K x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory |
Advanced Micro Devices |
| 32 |
AM29LV010BT-45RFI |
1 Megabit (128 K x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory |
Advanced Micro Devices |
| 33 |
AM29LV010BT-45RFIB |
1 Megabit (128 K x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory |
Advanced Micro Devices |
| 34 |
AM29LV010BT-45RJC |
1 Megabit (128 K x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory |
Advanced Micro Devices |
| 35 |
AM29LV010BT-45RJCB |
1 Megabit (128 K x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory |
Advanced Micro Devices |
| 36 |
AM29LV010BT-45RJE |
1 Megabit (128 K x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory |
Advanced Micro Devices |
| 37 |
AM29LV010BT-45RJEB |
1 Megabit (128 K x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory |
Advanced Micro Devices |
| 38 |
AM29LV010BT-45RJI |
1 Megabit (128 K x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory |
Advanced Micro Devices |
| 39 |
AM29LV010BT-45RJIB |
1 Megabit (128 K x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory |
Advanced Micro Devices |
| 40 |
CDBT-40-G |
Small Signal Schottky Diodes, VRRM=40V, VR=40V, IO=200mA |
Comchip Technology |
| 41 |
CDBT-40A-G |
Small Signal Schottky Diodes, VRRM=40V, VR=40V, IO=200mA |
Comchip Technology |
| 42 |
CDBT-40C-G |
Small Signal Schottky Diodes, VRRM=40V, VR=40V, IO=200mA |
Comchip Technology |
| 43 |
CDBT-40S-G |
Small Signal Schottky Diodes, VRRM=40V, VR=40V, IO=200mA |
Comchip Technology |
| 44 |
HYB3164165BT-40 |
4M x 16-Bit Dynamic RAM |
Siemens |
| 45 |
HYB3164405BT-40 |
16M x 4-Bit Dynamic RAM |
Siemens |
| 46 |
HYB3164805BT-40 |
8M x 8-Bit Dynamic RAM |
Siemens |
| 47 |
HYB3165165BT-40 |
4M x 16 Bit 4k EDO DRAM |
Infineon |
| 48 |
HYB3165165BT-40 |
4M x 16-Bit Dynamic RAM |
Siemens |
| 49 |
HYB3165405BT-40 |
16M x 4-Bit Dynamic RAM |
Siemens |
| 50 |
HYB3165805BT-40 |
8M x 8-Bit Dynamic RAM |
Siemens |
| 51 |
HYB3166165BT-40 |
4M x 16-Bit Dynamic RAM |
Siemens |
| 52 |
KM416C1004BT-45 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns |
Samsung Electronic |
| 53 |
KM416C1204BT-45 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns |
Samsung Electronic |
| 54 |
PIC16C58BT-40/SO |
This powerful (100 nanosecond instruction execution) yet easy-to-program (only 33 single word instructions) CMOS OTP-based 8-bit ... |
Microchip |
| 55 |
PIC16C58BT-40/SS |
This powerful (100 nanosecond instruction execution) yet easy-to-program (only 33 single word instructions) CMOS OTP-based 8-bit ... |
Microchip |
| 56 |
SST25WF040BT-40I/CS |
Memory |
Microchip |
| 57 |
SST25WF040BT-40I/NP |
Memory |
Microchip |
| 58 |
SST25WF040BT-40I/SN |
Memory |
Microchip |
| 59 |
SST25WF080BT-40I/CS |
Memory |
Microchip |
| 60 |
SST25WF080BT-40I/NP |
Memory |
Microchip |
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