No. |
Part Name |
Description |
Manufacturer |
31 |
2N6121 |
COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS |
MOSPEC Semiconductor |
32 |
2N6122 |
COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS |
MOSPEC Semiconductor |
33 |
2N6123 |
COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS |
MOSPEC Semiconductor |
34 |
2N6124 |
COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS |
MOSPEC Semiconductor |
35 |
2N6125 |
COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS |
MOSPEC Semiconductor |
36 |
2N6126 |
COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS |
MOSPEC Semiconductor |
37 |
2N6292 |
Silicon plastic power NPN transistor. General-purpose switching and amplifier applications. Vceo = 70Vdc, Vcb = 80Vdc, Veb = 5Vdc, Ic = 7Adc, Ib = 3Adc, PD = 40W. |
USHA India LTD |
38 |
2N6486 |
NPN/PNP PLASTIC POWER TRANSISTORS |
Boca Semiconductor Corporation |
39 |
2N6487 |
NPN/PNP PLASTIC POWER TRANSISTORS |
Boca Semiconductor Corporation |
40 |
2N6488 |
NPN/PNP PLASTIC POWER TRANSISTORS |
Boca Semiconductor Corporation |
41 |
2N6489 |
NPN/PNP PLASTIC POWER TRANSISTORS |
Boca Semiconductor Corporation |
42 |
2N6490 |
NPN/PNP PLASTIC POWER TRANSISTORS |
Boca Semiconductor Corporation |
43 |
2N6491 |
NPN/PNP PLASTIC POWER TRANSISTORS |
Boca Semiconductor Corporation |
44 |
2SC2233 |
NPN silicon plastic power transistor. Designed for use in B/W TV horizontal deflection output. Vcbo =200V, DC current gain: 20 @ Ic = 4A. Pd = 40W. |
USHA India LTD |
45 |
2SD313 |
NPN silicon plastic power transistor. Designed for low frequency power amplifier. Vceo =60V, DC current gain: 40 @ Ic = 2A. Pd = 30W. |
USHA India LTD |
46 |
2SD880Y |
NPN silicon plastic power transistor. Designed for low frequency power amplifier. Vceo =60V, DC current gain: 20 @ Ic = 3A. Pd = 30W. |
USHA India LTD |
47 |
3329/03 |
Hybrid IC power booster |
Burr Brown |
48 |
5962-87539013X |
t(pd): 25ns; t(s): 15ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
49 |
5962-8753901LA |
t(pd): 25ns; t(s): 15ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
50 |
5962-87539053X |
t(pd): 25ns; t(s): 15ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
51 |
5962-8753905LA |
t(pd): 25ns; t(s): 15ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
52 |
5962-88670013X |
t(pd): 25ns; t(s): 15ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
53 |
5962-8867001LA |
t(pd): 25ns; t(s): 15ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
54 |
5962-88670053X |
t(pd): 25ns; t(s): 15ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
55 |
5962-8867005LA |
t(pd): 25ns; t(s): 15ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
56 |
5962-88724013X |
t(pd): 25ns; t(s): 18ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
57 |
5962-8872401LA |
t(pd): 25ns; t(s): 18ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
58 |
5962-88724043X |
t(pd): 20ns; t(s): 17ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
59 |
5962-8872404LA |
t(pd): 20ns; t(s): 17ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
60 |
5962-89755013X |
t(pd): 25ns; t(s): 18ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
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