| No. |
Part Name |
Description |
Manufacturer |
| 31 |
GBPC12005 |
Bridge Rectifiers (Glass Passivated) |
Fairchild Semiconductor |
| 32 |
GBPC12005 |
GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER |
General Semiconductor |
| 33 |
GBPC12005 |
Glass Passivated Single-Phase Bridge Rectifier |
Vishay |
| 34 |
GBPC12005W |
12A Bridge Rectifier |
Fairchild Semiconductor |
| 35 |
GBPC12005W |
Diodes |
Vishay |
| 36 |
HTRC12002B |
HITAG co-processor |
Philips |
| 37 |
KLPC1200 |
KLPC series POWR-PRO class L fuse. Time-delay. 1200A, 600VAC, 480VDC. |
Littelfuse |
| 38 |
KM416C1200B |
1M x 16Bit CMOS Dynamic RAM with Fast Page Mode |
Samsung Electronic |
| 39 |
KM416C1200BJ-5 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 50ns |
Samsung Electronic |
| 40 |
KM416C1200BJ-6 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
| 41 |
KM416C1200BJ-7 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 70ns |
Samsung Electronic |
| 42 |
KM416C1200BJL-5 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 50ns |
Samsung Electronic |
| 43 |
KM416C1200BJL-6 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
| 44 |
KM416C1200BJL-7 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 70ns |
Samsung Electronic |
| 45 |
KM416C1200BT-5 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 50ns |
Samsung Electronic |
| 46 |
KM416C1200BT-6 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
| 47 |
KM416C1200BT-7 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 70ns |
Samsung Electronic |
| 48 |
KM416C1200BTL-5 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 50ns |
Samsung Electronic |
| 49 |
KM416C1200BTL-6 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
| 50 |
KM416C1200BTL-7 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 70ns |
Samsung Electronic |
| 51 |
KM416C1200C |
1M x 16Bit CMOS Dynamic RAM with Fast Page Mode |
Samsung Electronic |
| 52 |
KM416C1200CJ-5 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 50ns |
Samsung Electronic |
| 53 |
KM416C1200CJ-6 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
| 54 |
KM416C1200CJL-5 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 50ns |
Samsung Electronic |
| 55 |
KM416C1200CJL-6 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
| 56 |
KM416C1200CT-5 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 50ns |
Samsung Electronic |
| 57 |
KM416C1200CT-6 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
| 58 |
KM416C1200CTL-5 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 50ns |
Samsung Electronic |
| 59 |
KM416C1200CTL-6 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
| 60 |
LDC1200 |
POWR-PRO class L fuse. 1200 amperes. Voltage rating: 600 Volts AC 600 Volts DC. Interrupting rating: AC: 200,000 amperes rms symmetrical, DC: 50,000 ampetres(16 millisecond time constant). |
Littelfuse |
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