No. |
Part Name |
Description |
Manufacturer |
31 |
GM72V66841CLT-8 |
2097152 word x 8 bit x 4 bank synchronous dynamic RAM |
LG Semiconductor |
32 |
HY57V281620HCLT-6 |
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 166MHz |
Hynix Semiconductor |
33 |
HY57V281620HCLT-6I |
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 166MHz |
Hynix Semiconductor |
34 |
HY57V281620HCLT-7 |
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 143MHz |
Hynix Semiconductor |
35 |
HY57V281620HCLT-7I |
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 143MHz |
Hynix Semiconductor |
36 |
HY57V281620HCLT-8 |
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 125MHz |
Hynix Semiconductor |
37 |
HY57V281620HCLT-8I |
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 125MHz |
Hynix Semiconductor |
38 |
HY57V281620HCLT-H |
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 133MHz |
Hynix Semiconductor |
39 |
HY57V281620HCLT-HI |
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 133MHz |
Hynix Semiconductor |
40 |
HY57V281620HCLT-K |
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 133MHz |
Hynix Semiconductor |
41 |
HY57V281620HCLT-KI |
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 133MHz |
Hynix Semiconductor |
42 |
HY57V281620HCLT-P |
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 100MHz |
Hynix Semiconductor |
43 |
HY57V281620HCLT-PI |
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 100MHz |
Hynix Semiconductor |
44 |
HY57V281620HCLT-S |
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 100MHz |
Hynix Semiconductor |
45 |
HY57V281620HCLT-SI |
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 100MHz |
Hynix Semiconductor |
46 |
HY57V643220CLT-47 |
4 Banks x 512K x 32Bit Synchronous DRAM |
Hynix Semiconductor |
47 |
HY57V643220CLT-5 |
4 Banks x 512K x 32Bit Synchronous DRAM |
Hynix Semiconductor |
48 |
HY57V643220CLT-55 |
4 Banks x 512K x 32Bit Synchronous DRAM |
Hynix Semiconductor |
49 |
HY57V643220CLT-6 |
4 Banks x 512K x 32Bit Synchronous DRAM |
Hynix Semiconductor |
50 |
HY57V643220CLT-7 |
4 Banks x 512K x 32Bit Synchronous DRAM |
Hynix Semiconductor |
51 |
HY57V643220CLT-8 |
4 Banks x 512K x 32Bit Synchronous DRAM |
Hynix Semiconductor |
52 |
HY57V643220CLT-P |
4 Banks x 512K x 32Bit Synchronous DRAM |
Hynix Semiconductor |
53 |
HY57V643220CLT-S |
4 Banks x 512K x 32Bit Synchronous DRAM |
Hynix Semiconductor |
54 |
KM681002CLT-10 |
128K x 8 high speed static RAM, 5V operating, 10ns, low power |
Samsung Electronic |
55 |
KM681002CLT-12 |
128K x 8 high speed static RAM, 5V operating, 12ns, low power |
Samsung Electronic |
56 |
KM681002CLT-15 |
128K x 8 high speed static RAM, 5V operating, 15ns, low power |
Samsung Electronic |
57 |
KM681002CLT-20 |
128K x 8 high speed static RAM, 5V operating, 20ns, low power |
Samsung Electronic |
58 |
KM684000CLT-5L |
512Kx8 bit Low Power CMOS Static RAM |
Samsung Electronic |
59 |
KM684000CLT-7L |
512Kx8 bit Low Power CMOS Static RAM |
Samsung Electronic |
60 |
PCLT-2A |
Dual current limited overvoltage protected digital termination |
ST Microelectronics |
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