| No. |
Part Name |
Description |
Manufacturer |
| 31 |
CM1506 |
HIGH CURRENT SILICON BRIDGE RECTIFIERS |
TRSYS |
| 32 |
CM1506W |
HIGH CURRENT SILICON BRIDGE RECTIFIERS(VOLTAGE - 50 to 1000 Volts CURRENT - 15 Amperes) |
Panjit International Inc |
| 33 |
CM1508 |
HIGH CURRENT SILICON BRIDGE RECTIFIERS(VOLTAGE - 50 to 1000 Volts CURRENT - 15 Amperes) |
Panjit International Inc |
| 34 |
CM1508 |
HIGH CURRENT SILICON BRIDGE RECTIFIERS(VOLTAGE - 50 to 800 Volts CURRENT - 10 to 35 Amperes) |
Panjit International Inc |
| 35 |
CM1508 |
800 V, 15 A, high current silicon bridge rectifier |
TRANSYS Electronics Limited |
| 36 |
CM1508 |
HIGH CURRENT SILICON BRIDGE RECTIFIERS |
TRSYS |
| 37 |
CM1508W |
HIGH CURRENT SILICON BRIDGE RECTIFIERS(VOLTAGE - 50 to 1000 Volts CURRENT - 15 Amperes) |
Panjit International Inc |
| 38 |
CM150DU-12F |
IGBT Modules: 600V |
Mitsubishi Electric Corporation |
| 39 |
CM150DU-12F |
Trench Gate Design Dual IGBTMOD�� 150 Amperes/600 Volts |
Powerex Power Semiconductors |
| 40 |
CM150DU-12H |
IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 41 |
CM150DU-12H |
IGBT Modules: 600V |
Mitsubishi Electric Corporation |
| 42 |
CM150DU-12H |
Dual IGBTMOD 150 Amperes/600 Volts |
Powerex Power Semiconductors |
| 43 |
CM150DU-24F |
MITSUBISHI IGBT MODULES HIGH POWER SWITCHING USE |
Mitsubishi Electric Corporation |
| 44 |
CM150DU-24F |
IGBT Modules:1200V |
Mitsubishi Electric Corporation |
| 45 |
CM150DU-24F |
Trench Gate Design Dual IGBTMOD�� 150 Amperes/1200 Volts |
Powerex Power Semiconductors |
| 46 |
CM150DU-24H |
IGBT Modules:1200V |
Mitsubishi Electric Corporation |
| 47 |
CM150DU-24H |
IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 48 |
CM150DU-24H |
Dual IGBTMOD 150 Amperes/1200 Volts |
Powerex Power Semiconductors |
| 49 |
CM150DU-34KA |
IGBT Modules:1700V |
Mitsubishi Electric Corporation |
| 50 |
CM150DU-34KA |
Dual IGBTMOD 150 Amperes/1700 Volts |
Powerex Power Semiconductors |
| 51 |
CM150DY-12H |
IGBT Modules: 600V |
Mitsubishi Electric Corporation |
| 52 |
CM150DY-12H |
HIGH POWER SWITCHING USE INSULATED TYPE IGBT MODULES |
Mitsubishi Electric Corporation |
| 53 |
CM150DY-12H |
Dual IGBTMOD 150 Amperes/600 Volts |
Powerex Power Semiconductors |
| 54 |
CM150DY-12NF |
HIGH POWER SWITCHING USE |
Mitsubishi Electric Corporation |
| 55 |
CM150DY-24H |
IGBT Modules:1200V |
Mitsubishi Electric Corporation |
| 56 |
CM150DY-24H |
MITSUBISHI IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 57 |
CM150DY-24H |
Dual IGBTMOD 150 Amperes/1200 Volts |
Powerex Power Semiconductors |
| 58 |
CM150DY-28H |
Dual IGBTMOD 150 Amperes/1400 Volts |
Powerex Power Semiconductors |
| 59 |
CM150E3U-12F |
IGBT Modules: 600V |
Mitsubishi Electric Corporation |
| 60 |
CM150E3U-12H |
IGBT Modules: 600V |
Mitsubishi Electric Corporation |
| | | |
