| No. |
Part Name |
Description |
Manufacturer |
| 31 |
CP1008 |
800 V single phase silicon bridge |
TRANSYS Electronics Limited |
| 32 |
CP1008 |
SINGLE-PHASE SILICON BRIDGE |
TRSYS |
| 33 |
CP100A |
0.800W General Purpose PNP Plastic Leaded Transistor. 50V Vceo, 1.000A Ic, 50 - 120 hFE |
Continental Device India Limited |
| 34 |
CP100B |
0.800W General Purpose PNP Plastic Leaded Transistor. 50V Vceo, 1.000A Ic, 100 - 200 hFE |
Continental Device India Limited |
| 35 |
CP1016 |
60.000W General Purpose PNP Metal Can Transistor. 150V Vceo, 10.000A Ic, 2000 - 20000 hFE. |
Continental Device India Limited |
| 36 |
CP107 |
60.000W Medium Power PNP Plastic Leaded Transistor. 130V Vceo, 10.000A Ic, 2000 - 20000 hFE. |
Continental Device India Limited |
| 37 |
CP108 |
Chip Form: SCHOTTKY RECTIFIER |
Central Semiconductor |
| 38 |
CRCW08052001FRT1 |
Low-Cost 100 mA High-Voltage Buck and Buck-Boost Using NCP1052 |
ON Semiconductor |
| 39 |
DS25CP102 |
3.125 Gbps 2X2 LVDS Crosspoint Switch w/ TX Pre-Emphasis and RX Equalization |
Texas Instruments |
| 40 |
DS25CP102Q-Q1 |
Auto 3.125 Gbps 2X2 LVDS Crosspoint Switch w/ Tx Pre-Emphasis and Rx Equalization |
Texas Instruments |
| 41 |
DS25CP102QSQ/NOPB |
Auto 3.125 Gbps 2X2 LVDS Crosspoint Switch w/ Tx Pre-Emphasis and Rx Equalization 16-WQFN -40 to 85 |
Texas Instruments |
| 42 |
DS25CP102QSQX/NOPB |
Auto 3.125 Gbps 2X2 LVDS Crosspoint Switch w/ Tx Pre-Emphasis and Rx Equalization 16-WQFN -40 to 85 |
Texas Instruments |
| 43 |
DS25CP102TSQ/NOPB |
3.125 Gbps 2X2 LVDS Crosspoint Switch w/ TX Pre-Emphasis and RX Equalization 16-WQFN -40 to 85 |
Texas Instruments |
| 44 |
DS25CP104A |
3.125 Gbps 4x4 LVDS Crosspoint Switch with Tx Pre-Emphasis & Rx Equalization |
Texas Instruments |
| 45 |
DS25CP104ATSQ/NOPB |
3.125 Gbps 4x4 LVDS Crosspoint Switch with Tx Pre-Emphasis & Rx Equalization 40-WQFN -40 to 85 |
Texas Instruments |
| 46 |
DS25CP104ATSQX/NOPB |
3.125 Gbps 4x4 LVDS Crosspoint Switch with Tx Pre-Emphasis & Rx Equalization 40-WQFN -40 to 85 |
Texas Instruments |
| 47 |
ECEC2CP102CJ |
Aluminum Electrolytic Capacitors (Radial Lead Type) UP-TS |
Panasonic |
| 48 |
ECEC2CP102DJ |
Aluminum Electrolytic Capacitors (Radial Lead Type) UP-TS |
Panasonic |
| 49 |
ECP103 |
1 Watt, High Linearity InGaP HBT Amplifier |
WJ Communications |
| 50 |
ECP103D |
1 Watt, High Linearity InGaP HBT Amplifier |
WJ Communications |
| 51 |
ECP103D-PCB2450 |
1 Watt, High Linearity InGaP HBT Amplifier |
WJ Communications |
| 52 |
ECP103D-PCB2650 |
1 Watt, High Linearity InGaP HBT Amplifier |
WJ Communications |
| 53 |
ECP103G |
1 Watt, High Linearity InGaP HBT Amplifier |
WJ Communications |
| 54 |
ECP103G-PCB2450 |
1 Watt, High Linearity InGaP HBT Amplifier |
WJ Communications |
| 55 |
ECP103G-PCB2650 |
1 Watt, High Linearity InGaP HBT Amplifier |
WJ Communications |
| 56 |
FCP104N60F |
N-Channel SuperFET� ll FRFET� MOSFET |
Fairchild Semiconductor |
| 57 |
HD6475328-CP10 |
original Hitachi CMOS microcomputer unit (MCU) |
Hitachi Semiconductor |
| 58 |
HD6475328CP10 |
V(cc): -0.3 to +7.0V; V(in): -0.3 to +0.3V; ; 16-bit microprocessor |
Hitachi Semiconductor |
| 59 |
IXCP10M45 |
Non-Switchable Current Regulators |
IXYS |
| 60 |
IXCP10M45S |
Switchable Current Regulators |
IXYS |
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