| No. |
Part Name |
Description |
Manufacturer |
| 31 |
BCR166W |
Digital Transistors - R1= 4,7 kOhm ; R2= 47 kOhm |
Infineon |
| 32 |
BCR166W |
PNP Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit) |
Siemens |
| 33 |
BCR169 |
Digital Transistors - R1= 4,7 kOhm |
Infineon |
| 34 |
BCR169 |
PNP Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit) |
Siemens |
| 35 |
BCR169F |
Single digital (Built-In Resistor) AF-Transistors in TSFP-3 Package |
Infineon |
| 36 |
BCR169FE6327 |
Digital Transistors - R1= 4,7 kOhm |
Infineon |
| 37 |
BCR169L3 |
Single digital (Built-In Resistor) AF-Transistors in TSLP-3 Package |
Infineon |
| 38 |
BCR169L3E6327 |
Digital Transistors - R1= 4,7 kOhm |
Infineon |
| 39 |
BCR169S |
Digital Transistors - SOT363 package |
Infineon |
| 40 |
BCR169S |
PNP Silicon Digital Transistor Array (Switching circuit, inverter, interface circuit, driver circuit) |
Siemens |
| 41 |
BCR169T |
Single digital (complex) AF-Transistors in SC75 package |
Infineon |
| 42 |
BCR169TE6327 |
Digital Transistors - R1=4,7 kOhm |
Infineon |
| 43 |
BCR169U |
Digital Transistors - SC74 package |
Infineon |
| 44 |
BCR169W |
Digital Transistors - R1= 4,7 kOhm |
Infineon |
| 45 |
BCR169W |
PNP Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit) |
Siemens |
| 46 |
BCR16A |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE A, B, C : NON-INSULATED TYPE E : INSULATED TYPE |
Mitsubishi Electric Corporation |
| 47 |
BCR16B |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE A, B, C : NON-INSULATED TYPE E : INSULATED TYPE |
Mitsubishi Electric Corporation |
| 48 |
BCR16C |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE A, B, C : NON-INSULATED TYPE E : INSULATED TYPE |
Mitsubishi Electric Corporation |
| 49 |
BCR16CM |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 50 |
BCR16CM |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 51 |
BCR16CM |
Triac 16 Amperes/400-600 Volts |
Powerex Power Semiconductors |
| 52 |
BCR16CM-12 |
Triac 16 Amperes/400-600 Volts |
Powerex Power Semiconductors |
| 53 |
BCR16CM-12L |
Triac 16 Amperes/400-600 Volts |
Powerex Power Semiconductors |
| 54 |
BCR16CM-8 |
Triac 16 Amperes/400-600 Volts |
Powerex Power Semiconductors |
| 55 |
BCR16CM-8L |
Triac 16 Amperes/400-600 Volts |
Powerex Power Semiconductors |
| 56 |
BCR16CS |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 57 |
BCR16CS |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 58 |
BCR16CS |
MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Powerex Power Semiconductors |
| 59 |
BCR16E |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE A, B, C : NON-INSULATED TYPE E : INSULATED TYPE |
Mitsubishi Electric Corporation |
| 60 |
BCR16HM |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
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