No. |
Part Name |
Description |
Manufacturer |
31 |
CTT181GK16 |
Thyristor-Thyristor Modules |
etc |
32 |
CTT181GK18 |
Thyristor-Thyristor Modules |
etc |
33 |
FQPF5N50CTTU |
500V N-Channel Advance Q-FET C-Series |
Fairchild Semiconductor |
34 |
GS7000-CTT |
Serial Digital Video Transceiver |
Gennum Corporation |
35 |
GS7005-CTT |
Complete Serial Digital Video Receiver |
Gennum Corporation |
36 |
HER305P |
High efficiency rectifier. Max recurrent peak reverse voltage 400V, max RMS voltage 280V, max DC blocking voltage 400V. Max average forward recttified current 3.0A at 50degreC. |
Rectron Semiconductor |
37 |
HM514260CTT-6 |
60ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
38 |
HM514260CTT-6R |
60ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
39 |
HM514260CTT-7 |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
40 |
HM514260CTT-8 |
80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
41 |
HM514400CTT-6 |
1,048,576-word x 4-bit dynamic random access memory, 60ns |
Hitachi Semiconductor |
42 |
HM514400CTT-7 |
1,048,576-word x 4-bit dynamic random access memory, 70ns |
Hitachi Semiconductor |
43 |
HM514400CTT-8 |
1,048,576-word x 4-bit dynamic random access memory, 80ns |
Hitachi Semiconductor |
44 |
HM514800CTT-6 |
60ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
45 |
HM514800CTT-7 |
70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
46 |
HM514800CTT-8 |
80ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
47 |
HM51S4260CTT-6 |
60ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
48 |
HM51S4260CTT-6R |
60ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
49 |
HM51S4260CTT-7 |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
50 |
HM51S4260CTT-8 |
80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
51 |
HM51S4800CTT-6 |
60ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
52 |
HM51S4800CTT-7 |
70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
53 |
HM51S4800CTT-8 |
80ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
54 |
HM6216255HCTT-10 |
4M High Speed SRAM (256-kword x 16-bit) |
Hitachi Semiconductor |
55 |
HM6216255HCTT-12 |
Memory>Fast SRAM>Asynchronous SRAM |
Renesas |
56 |
HM6216255HCTT/HCLTT |
High-Speed SRAMs |
Hitachi Semiconductor |
57 |
HM6216255HCTTI |
High-Speed SRAMs |
Hitachi Semiconductor |
58 |
HM6216255HCTTI-12 |
Memory>Fast SRAM>Asynchronous SRAM |
Renesas |
59 |
HM62W16255HCTT-10 |
4M High Speed SRAM (256-kword x 16-bit) |
Hitachi Semiconductor |
60 |
HM62W16255HCTT-12 |
Memory>Fast SRAM>Asynchronous SRAM |
Renesas |
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