| No. |
Part Name |
Description |
Manufacturer |
| 31 |
HCPL2630WV |
8-Pin DIP Dual-Channel High Speed 10 MBit/s Logic Gate Output Optocoupler |
Fairchild Semiconductor |
| 32 |
HCPL2631 |
8-Pin DIP Dual-Channel High Speed 10 MBit/s Logic Gate Output Optocoupler |
Fairchild Semiconductor |
| 33 |
HCPL2631S |
8-Pin DIP Dual-Channel High Speed 10 MBit/s Logic Gate Output Optocoupler |
Fairchild Semiconductor |
| 34 |
HCPL2631SD |
8-Pin DIP Dual-Channel High Speed 10 MBit/s Logic Gate Output Optocoupler |
Fairchild Semiconductor |
| 35 |
HCPL2631SDV |
8-Pin DIP Dual-Channel High Speed 10 MBit/s Logic Gate Output Optocoupler |
Fairchild Semiconductor |
| 36 |
HCPL2631SV |
8-Pin DIP Dual-Channel High Speed 10 MBit/s Logic Gate Output Optocoupler |
Fairchild Semiconductor |
| 37 |
HCPL2631V |
8-Pin DIP Dual-Channel High Speed 10 MBit/s Logic Gate Output Optocoupler |
Fairchild Semiconductor |
| 38 |
HCPL2631W |
8-Pin DIP Dual-Channel High Speed 10 MBit/s Logic Gate Output Optocoupler |
Fairchild Semiconductor |
| 39 |
HCPL2631WV |
8-Pin DIP Dual-Channel High Speed 10 MBit/s Logic Gate Output Optocoupler |
Fairchild Semiconductor |
| 40 |
ISPLSI5256VE-100LT100 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. |
Lattice Semiconductor |
| 41 |
ISPLSI5256VE-100LT100I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. |
Lattice Semiconductor |
| 42 |
ISPLSI5256VE-100LT128 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. |
Lattice Semiconductor |
| 43 |
ISPLSI5256VE-100LT128I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. |
Lattice Semiconductor |
| 44 |
ISPLSI5256VE-100LT256 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. |
Lattice Semiconductor |
| 45 |
ISPLSI5256VE-100LT256I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. |
Lattice Semiconductor |
| 46 |
ISPLSI5256VE-100LT272 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. |
Lattice Semiconductor |
| 47 |
ISPLSI5256VE-100LT272I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. |
Lattice Semiconductor |
| 48 |
ISPLSI5512VE-100LB388 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. |
Lattice Semiconductor |
| 49 |
ISPLSI5512VE-100LB388I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. |
Lattice Semiconductor |
| 50 |
ISPLSI5512VE-100LF256 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. |
Lattice Semiconductor |
| 51 |
ISPLSI5512VE-100LF256I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. |
Lattice Semiconductor |
| 52 |
ISPLSI5512VE-100LF272 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. |
Lattice Semiconductor |
| 53 |
ISPLSI5512VE-100LF272I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. |
Lattice Semiconductor |
| 54 |
ISPLSI5512VE-100LF388 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. |
Lattice Semiconductor |
| 55 |
ISPLSI5512VE-100LF388I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. |
Lattice Semiconductor |
| 56 |
KM44L32031BT-F0 |
128 Mb DDR SDRAM. Version 0.61, Operating freq. 100 MHz, speed 10 ns. |
Samsung Electronic |
| 57 |
KM44L32031BT-G0 |
128 Mb DDR SDRAM. Version 0.61, Operating freq. 100 MHz, speed 10 ns. |
Samsung Electronic |
| 58 |
KM48L16031BT-F0 |
128 Mb DDR SDRAM. Version 0.61, Operating freq. 100 MHz, speed 10 ns. |
Samsung Electronic |
| 59 |
KM48L16031BT-G0 |
128 Mb DDR SDRAM. Version 0.61, Operating freq. 100 MHz, speed 10 ns. |
Samsung Electronic |
| 60 |
MP1382 |
1/2 inche photoncounting module. Window material quartz. Dark counts per second 10 cps. |
PerkinElmer Optoelectronics |
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