No. |
Part Name |
Description |
Manufacturer |
31 |
2N7002KA |
N Channel MOSFET ESD Protected 2000V |
Korea Electronics (KEC) |
32 |
2N7002KU |
N Channel MOSFET ESD Protected 2000V |
Korea Electronics (KEC) |
33 |
ADM6819 |
FET Drive Simple Sequencer™ w/Fixed 200ms Delay |
Analog Devices |
34 |
ADP5052 |
5-Channel Integrated Power Solution with Quad Buck Regulators and 200 mA LDO Regulator |
Analog Devices |
35 |
BU406 |
7 AMPERES NPN SILICON POWER TRANSISTORS 60 WATTS 150 and 200 VOLTS |
Motorola |
36 |
CM200DU-12H |
Dual IGBTMOD 200 Amperes/600 Volts |
Powerex Power Semiconductors |
37 |
CM200DU-24H |
Dual IGBTMOD 200 Amperes/1200 Volts |
Powerex Power Semiconductors |
38 |
CM200DY-24H |
Dual IGBTMOD 200 Amperes/1200 Volts |
Powerex Power Semiconductors |
39 |
CM200E3U-12H |
Chopper IGBTMOD 200 Amperes/600 Volts |
Powerex Power Semiconductors |
40 |
CM200HA-24H |
Single IGBTMOD 200 Amperes/1200 Volts |
Powerex Power Semiconductors |
41 |
CM200TU-12H |
Six IGBTMOD 200 Amperes/600 Volts |
Powerex Power Semiconductors |
42 |
CMR1S-01 |
SUPER FAST RECOVERY RECTIFIER 1.0 AMP, 100 AND 200 VOLTS |
Central Semiconductor |
43 |
CMR1S-02 |
SUPER FAST RECOVERY RECTIFIER 1.0 AMP, 100 AND 200 VOLTS |
Central Semiconductor |
44 |
CY39100V484B-200BBC |
Delta39K ISR CPLD. Speed 200 MHz. |
Cypress |
45 |
CY7C1511V18-200BZC |
72 Mbit QDR-II SRAM 4-word burst architecture. Speed 200 MHz. |
Cypress |
46 |
CY7C1513V18-200BZC |
72 Mbit QDR-II SRAM 4-word burst architecture. Speed 200 MHz. |
Cypress |
47 |
CY7C1515V18-200BZC |
72 Mbit QDR-II SRAM 4-word burst architecture. Speed 200 MHz. |
Cypress |
48 |
CY7C1526V18-200BZC |
72 Mbit QDR-II SRAM 4-word burst architecture. Speed 200 MHz. |
Cypress |
49 |
EN27LV010200J |
1Megabit low voltage EPROM (128K x 8). Speed 200ns. 3.0V to 3.6V Vcc tolerance. |
Eon Silicon Solution |
50 |
EN27LV010200JI |
1Megabit low voltage EPROM (128K x 8). Speed 200ns. 3.0V to 3.6V Vcc tolerance. |
Eon Silicon Solution |
51 |
EN27LV010200P |
1Megabit low voltage EPROM (128K x 8). Speed 200ns. 3.0V to 3.6V Vcc tolerance. |
Eon Silicon Solution |
52 |
EN27LV010200PI |
1Megabit low voltage EPROM (128K x 8). Speed 200ns. 3.0V to 3.6V Vcc tolerance. |
Eon Silicon Solution |
53 |
EN27LV010200T |
1Megabit low voltage EPROM (128K x 8). Speed 200ns. 3.0V to 3.6V Vcc tolerance. |
Eon Silicon Solution |
54 |
EN27LV010200TI |
1Megabit low voltage EPROM (128K x 8). Speed 200ns. 3.0V to 3.6V Vcc tolerance. |
Eon Silicon Solution |
55 |
EN27LV010B200J |
1Megabit low voltage EPROM (128K x 8). Speed 200ns. 2.7V to 3.6V Vcc tolerance. |
Eon Silicon Solution |
56 |
EN27LV010B200JI |
1Megabit low voltage EPROM (128K x 8). Speed 200ns. 2.7V to 3.6V Vcc tolerance. |
Eon Silicon Solution |
57 |
EN27LV010B200P |
1Megabit low voltage EPROM (128K x 8). Speed 200ns. 2.7V to 3.6V Vcc tolerance. |
Eon Silicon Solution |
58 |
EN27LV010B200PI |
1Megabit low voltage EPROM (128K x 8). Speed 200ns. 2.7V to 3.6V Vcc tolerance. |
Eon Silicon Solution |
59 |
EN27LV010B200T |
1Megabit low voltage EPROM (128K x 8). Speed 200ns. 2.7V to 3.6V Vcc tolerance. |
Eon Silicon Solution |
60 |
EN27LV010B200TI |
1Megabit low voltage EPROM (128K x 8). Speed 200ns. 2.7V to 3.6V Vcc tolerance. |
Eon Silicon Solution |
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