No. |
Part Name |
Description |
Manufacturer |
31 |
2N2378 |
SPAT® PNP silicon transistor switch and amplifiers |
Sprague |
32 |
2N2904 |
Silicon PNP epitaxial planar transistor for high speed switching applications and amplifier circuits |
AEG-TELEFUNKEN |
33 |
2N2904A |
Silicon PNP epitaxial planar transistor for high speed switching applications and amplifier circuits |
AEG-TELEFUNKEN |
34 |
2N2905 |
Silicon PNP epitaxial planar transistor for high speed switching applications and amplifier circuits |
AEG-TELEFUNKEN |
35 |
2N2905A |
Silicon PNP epitaxial planar transistor for high speed switching applications and amplifier circuits |
AEG-TELEFUNKEN |
36 |
2N297A |
PNP germanium power transistor for military and industrial power switching and amplifier applications |
Motorola |
37 |
2N3010 |
NPN High Current General Purpose Medium Speed Amplifiers |
Semicoa Semiconductor |
38 |
2N3053 |
NPN Silicon Switching and amplifier Transistor |
ITT Semiconductors |
39 |
2N3055 |
High power NPN transistor. General-purpose switching and amplifier application. Vceo = 60Vdc, Vcer = 70Vdc, Vcb = 100Vdc, Veb = 15Vdc, Ic = 7Adc, Ib = 7Adc, PD = 115W. |
USHA India LTD |
40 |
2N3055H |
NPN silicon power transistor. 15Amp, 100V, 115Watt. These devices are designed for general purpose switching and amplifier applications. |
USHA India LTD |
41 |
2N3600 |
HIGH-FREQUENCY OSCILLATORS AND AMPLIFIERS |
SGS Thomson Microelectronics |
42 |
2N3600 |
Epitaxial planar NPN transistor designed High-Frequency oscillators and amplifiers |
SGS-ATES |
43 |
2N3600 |
HIGH-FREQUENCY OSCILLATORS AND AMPLIFIERS |
ST Microelectronics |
44 |
2N3903 |
NPN silicon general purpose switching and amplifier transistor |
ITT Semiconductors |
45 |
2N3903 |
NPN Silicon Expitaxial Planar Transistor for switching and amplifier applications |
Semtech |
46 |
2N3904 |
NPN silicon general purpose switching and amplifier transistor |
ITT Semiconductors |
47 |
2N3904 |
NPN Silicon Expitaxial Planar Transistor for switching and amplifier applications |
Semtech |
48 |
2N3905 |
PNP silicon general purpose switching and amplifier transistor |
ITT Semiconductors |
49 |
2N3905 |
NPN Silicon Expitaxial Planar Transistor for switching and amplifier applications |
Semtech |
50 |
2N3906 |
PNP silicon general purpose switching and amplifier transistor |
ITT Semiconductors |
51 |
2N3906 |
NPN Silicon Expitaxial Planar Transistor for switching and amplifier applications |
Semtech |
52 |
2N4123 |
General Purpose NPN silicon switching and amplifier transistor |
ITT Semiconductors |
53 |
2N4124 |
General Purpose NPN silicon switching and amplifier transistor |
ITT Semiconductors |
54 |
2N4125 |
General Purpose NPN silicon switching and amplifier transistor |
ITT Semiconductors |
55 |
2N4126 |
General Purpose NPN silicon switching and amplifier transistor |
ITT Semiconductors |
56 |
2N495 |
SPAT® PNP silicon transistor switch and amplifiers |
Sprague |
57 |
2N496 |
SPAT® PNP silicon transistor switch and amplifiers |
Sprague |
58 |
2N5294 |
Silicon plastic power NPN transistor. General-purpose switching and amplifier applications. Vceo = 70Vdc, Vcer = 75Vdc, Vcbo = 80Vdc, Veb = 7Vdc, Ic = 4Adc, Ib = 2Adc, PD = 36W. |
USHA India LTD |
59 |
2N5296 |
Silicon plastic power NPN transistor. General-purpose switching and amplifier applications. Vceo = 40Vdc, Vcer = 50Vdc, Vcbo = 60Vdc, Veb = 5Vdc, Ic = 4Adc, Ib = 2Adc, PD = 36W. |
USHA India LTD |
60 |
2N5336 |
Medium-power NPN silicon transistor designed for switching and wide band amplifier applications |
Motorola |
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