No. |
Part Name |
Description |
Manufacturer |
31 |
BU7486SFVM |
Ground Sense High Speed Low Voltage CMOS Operational Amplifiers |
ROHM |
32 |
BU7486SFVM-TR |
Ground Sense High Speed Low Voltage CMOS Operational Amplifiers |
ROHM |
33 |
BU7487F |
Ground Sense High Speed Low Voltage CMOS Operational Amplifiers |
ROHM |
34 |
BU7487F-E2 |
Ground Sense High Speed Low Voltage CMOS Operational Amplifiers |
ROHM |
35 |
BU7487FV |
Ground Sense High Speed Low Voltage CMOS Operational Amplifiers |
ROHM |
36 |
BU7487FV-E2 |
Ground Sense High Speed Low Voltage CMOS Operational Amplifiers |
ROHM |
37 |
BU7487SF |
Ground Sense High Speed Low Voltage CMOS Operational Amplifiers |
ROHM |
38 |
BU7487SF-E2 |
Ground Sense High Speed Low Voltage CMOS Operational Amplifiers |
ROHM |
39 |
BU7487SFV |
Ground Sense High Speed Low Voltage CMOS Operational Amplifiers |
ROHM |
40 |
BU7487SFV-E2 |
Ground Sense High Speed Low Voltage CMOS Operational Amplifiers |
ROHM |
41 |
CY7B9911V-5JCT |
3.3 V RoboClock+™, High Speed Low Voltage Programmable Skew Clock Buffer |
Cypress |
42 |
CY7B9911V-5JXC |
3.3 V RoboClock+™, High Speed Low Voltage Programmable Skew Clock Buffer |
Cypress |
43 |
CY7B9911V-5JXCT |
3.3 V RoboClock+™, High Speed Low Voltage Programmable Skew Clock Buffer |
Cypress |
44 |
DS_K6F1016U4C |
64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
Samsung Electronic |
45 |
DS_K6F2008U2E |
256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM |
Samsung Electronic |
46 |
DS_K6F2016U4E |
128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
Samsung Electronic |
47 |
DS_K6F3216T6M |
2M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
Samsung Electronic |
48 |
DS_K6F4016U6G |
256Kx16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
Samsung Electronic |
49 |
DS_K6F8016U6B |
512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
Samsung Electronic |
50 |
DS_K6F8016U6C |
512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
Samsung Electronic |
51 |
DS_K6X8008C2B |
1Mx8 bit Low Power and Low Voltage CMOS Static RAM |
Samsung Electronic |
52 |
IC62LV1008L-100B |
100ns; 2.7-3.6V; 1M x 8 low power and low Vcc CMOS static RAM |
ICSI |
53 |
IC62LV1008L-100BI |
100ns; 2.7-3.6V; 1M x 8 low power and low Vcc CMOS static RAM |
ICSI |
54 |
IC62LV1008L-55B |
55ns; 2.7-3.6V; 1M x 8 low power and low Vcc CMOS static RAM |
ICSI |
55 |
IC62LV1008L-55BI |
55ns; 2.7-3.6V; 1M x 8 low power and low Vcc CMOS static RAM |
ICSI |
56 |
IC62LV1008L-70B |
70ns; 2.7-3.6V; 1M x 8 low power and low Vcc CMOS static RAM |
ICSI |
57 |
IC62LV1008L-70BI |
70ns; 2.7-3.6V; 1M x 8 low power and low Vcc CMOS static RAM |
ICSI |
58 |
IC62LV1008LL-100D |
100ns; 2.7-3.6V; 1M x 8 low power and low Vcc CMOS static RAM |
ICSI |
59 |
IC62LV1008LL-100DI |
100ns; 2.7-3.6V; 1M x 8 low power and low Vcc CMOS static RAM |
ICSI |
60 |
IC62LV1008LL-55B |
55ns; 2.7-3.6V; 1M x 8 low power and low Vcc CMOS static RAM |
ICSI |
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