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Datasheets for D METAL

Datasheets found :: 1231
Page: | 1 | 2 | 3 | 4 | 5 | 6 |
No. Part Name Description Manufacturer
31 C67070-A2301-A70 IGBT Power Module (Single switch with chopper diode Package with insulated metal base plate) Siemens
32 C67070-A2514-A67 IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes Package with insulated metal base plate) Siemens
33 C67070-A2701-A67 IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) Siemens
34 C67070-A2702-A67 IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) Siemens
35 C67070-A2703-A67 IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) Siemens
36 C67070-A2704-A67 IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) Siemens
37 C67076-A2009-A70 IGBT Power Module (Single switch with chopper diode Including fast free-wheeling diodes Package with insulated metal base plate) Siemens
38 C67076-A2010-A70 IGBT Power Module (Single switch with chopper diode Including fast free-wheeling diodes Package with insulated metal base plate) Siemens
39 C67076-A2105-A70 IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) Siemens
40 C67076-A2106-A70 IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) Siemens
41 C67076-A2107-A70 IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) Siemens
42 C67076-A2108-A70 IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) Siemens
43 C67076-A2109-A70 IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) Siemens
44 CFY25 GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) Siemens
45 CFY25-17 GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) Siemens
46 CFY25-20 GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) Siemens
47 CFY25-23 GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) Siemens
48 CGY31 GaAs MMIC (Two-stage monolithic microwave IC MMIC amplifier All-gold metallization Chip fully passivated) Siemens
49 CGY52 GaAs MMIC (Two stages monolithic microwave IC MMICAmplifier All gold metallisation) Siemens
50 D..HR/CRCW . . . Rarefied Metal Glaze on High Quality Ceramic, Protective Over Glaze Passivation, SnPb Contacts on Ni Barrier Layer, Silver Palladium Contacts for Conductive Adhesive Attachment on Request, Suitable for Voltage Dividers and Hybrids Vishay
51 D1001UK GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W - 28V - 175MHz SINGLE ENDED SemeLAB
52 D1014 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET etc
53 D1024UK GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 40W - 28V - 500MHz PUSH?PULL SemeLAB
54 D1025UK GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 100W - 28V - 175MHz SINGLE ENDED SemeLAB
55 D1221UK GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W - 12.5V - 175MHz SINGLE ENDED SemeLAB
56 D1222UK GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 60W - 12.5V - 175MHz PUSH-PULL SemeLAB
57 D16D 16-Lead Hybrid Metal Can Dual-In-Line Package National Semiconductor
58 D2204UK GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W - 12.5V - 900MHz SINGLE ENDED SemeLAB
59 D2205UK GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 7.5W - 12.5V - 1GHz SINGLE ENDED SemeLAB
60 D2208UK GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 40W - 12.5V - 500MHz PUSH-PULL SemeLAB


Datasheets found :: 1231
Page: | 1 | 2 | 3 | 4 | 5 | 6 |



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