No. |
Part Name |
Description |
Manufacturer |
31 |
C67070-A2301-A70 |
IGBT Power Module (Single switch with chopper diode Package with insulated metal base plate) |
Siemens |
32 |
C67070-A2514-A67 |
IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes Package with insulated metal base plate) |
Siemens |
33 |
C67070-A2701-A67 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
34 |
C67070-A2702-A67 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
35 |
C67070-A2703-A67 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
36 |
C67070-A2704-A67 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
37 |
C67076-A2009-A70 |
IGBT Power Module (Single switch with chopper diode Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
38 |
C67076-A2010-A70 |
IGBT Power Module (Single switch with chopper diode Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
39 |
C67076-A2105-A70 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
40 |
C67076-A2106-A70 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
41 |
C67076-A2107-A70 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
42 |
C67076-A2108-A70 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
43 |
C67076-A2109-A70 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
44 |
CFY25 |
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
Siemens |
45 |
CFY25-17 |
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
Siemens |
46 |
CFY25-20 |
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
Siemens |
47 |
CFY25-23 |
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
Siemens |
48 |
CGY31 |
GaAs MMIC (Two-stage monolithic microwave IC MMIC amplifier All-gold metallization Chip fully passivated) |
Siemens |
49 |
CGY52 |
GaAs MMIC (Two stages monolithic microwave IC MMICAmplifier All gold metallisation) |
Siemens |
50 |
D..HR/CRCW . . . |
Rarefied Metal Glaze on High Quality Ceramic, Protective Over Glaze Passivation, SnPb Contacts on Ni Barrier Layer, Silver Palladium Contacts for Conductive Adhesive Attachment on Request, Suitable for Voltage Dividers and Hybrids |
Vishay |
51 |
D1001UK |
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W - 28V - 175MHz SINGLE ENDED |
SemeLAB |
52 |
D1014 |
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET |
etc |
53 |
D1024UK |
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 40W - 28V - 500MHz PUSH?PULL |
SemeLAB |
54 |
D1025UK |
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 100W - 28V - 175MHz SINGLE ENDED |
SemeLAB |
55 |
D1221UK |
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W - 12.5V - 175MHz SINGLE ENDED |
SemeLAB |
56 |
D1222UK |
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 60W - 12.5V - 175MHz PUSH-PULL |
SemeLAB |
57 |
D16D |
16-Lead Hybrid Metal Can Dual-In-Line Package |
National Semiconductor |
58 |
D2204UK |
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W - 12.5V - 900MHz SINGLE ENDED |
SemeLAB |
59 |
D2205UK |
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 7.5W - 12.5V - 1GHz SINGLE ENDED |
SemeLAB |
60 |
D2208UK |
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 40W - 12.5V - 500MHz PUSH-PULL |
SemeLAB |
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