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Datasheets for D RAD

Datasheets found :: 306
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No. Part Name Description Manufacturer
31 2SC2690A Use in audio and radio Frequency power amplifiers. NEC
32 2SC2690A Use in audio and radio Frequency power amplifiers. NEC
33 3135-14 High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications SGS Thomson Microelectronics
34 3135-25 High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications SGS Thomson Microelectronics
35 3135-25N High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications SGS Thomson Microelectronics
36 3135-35 High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications SGS Thomson Microelectronics
37 3135-45 High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications SGS Thomson Microelectronics
38 3135-7 High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications SGS Thomson Microelectronics
39 82729-30 High power silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications SGS Thomson Microelectronics
40 82729-60 High power silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications SGS Thomson Microelectronics
41 82731-1 Medium Power Silicon bipolar NPN transistor designed for S-Band radar pulsed driver applications SGS Thomson Microelectronics
42 82731-75 High Power Silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications SGS Thomson Microelectronics
43 82931-55 High Power Silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications SGS Thomson Microelectronics
44 82931-55N High Power Silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications SGS Thomson Microelectronics
45 82931-55S High Power Silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications SGS Thomson Microelectronics
46 83135-3 Medium power silicon bipolar NPN transistor designed for S-Band radar pulsed driver applications SGS Thomson Microelectronics
47 AFEDRI8201 IF Sampling Front End for AM/FM/HD Radio Compatible with TI DRIx50 Digital Baseband Processors Texas Instruments
48 AFEDRI8201PFBR IF Sampling Front End for AM/FM/HD Radio Compatible with TI DRIx50 Digital Baseband Processors Texas Instruments
49 AFEDRI8201PFBT IF Sampling Front End for AM/FM/HD Radio Compatible with TI DRIx50 Digital Baseband Processors Texas Instruments
50 AM1214-100 L-BAND RADAR APPLICATIONS, RF & MICROWAVE TRANSISTORS SGS Thomson Microelectronics
51 AM1214-100 L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS ST Microelectronics
52 AM1214-130 RF POWER TRANSISTORS L-BAND RADAR APPLICATIONS SGS Thomson Microelectronics
53 AM1214-130 RF POWER TRANSISTORS L-BAND RADAR APPLICATIONS ST Microelectronics
54 AM1214-175 L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS SGS Thomson Microelectronics
55 AM1214-200 L-BAND RADAR APPLICATIONS, RF & MICROWAVE TRANSISTORS SGS Thomson Microelectronics
56 AM1214-200 L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS ST Microelectronics
57 AM1214-250 RF POWER TRANSISTORS L-BAND RADAR APPLICATIONS SGS Thomson Microelectronics
58 AM1214-250 RF POWER TRANSISTORS L-BAND RADAR APPLICATIONS ST Microelectronics
59 AM1214-300 L-BAND RADAR APPLICATIONS, RF & MICROWAVE TRANSISTORS SGS Thomson Microelectronics
60 AM1214-325 L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS SGS Thomson Microelectronics


Datasheets found :: 306
Page: | 1 | 2 | 3 | 4 | 5 | 6 |



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