| No. |
Part Name |
Description |
Manufacturer |
| 31 |
1N5216 |
Diffused-Junction Silicon Rectifier for industrial and consumer-product |
RCA Solid State |
| 32 |
1N5217 |
Diffused-Junction Silicon Rectifier for industrial and consumer-product |
RCA Solid State |
| 33 |
1N5218 |
Diffused-Junction Silicon Rectifier for industrial and consumer-product |
RCA Solid State |
| 34 |
1N536 |
Diffused-Junction Silicon Rectifier, flanged-case, axial-lead-type |
RCA Solid State |
| 35 |
1N537 |
Diffused-Junction Silicon Rectifier, flanged-case, axial-lead-type |
RCA Solid State |
| 36 |
1N538 |
Diffused-Junction Silicon Rectifier, flanged-case, axial-lead-type |
RCA Solid State |
| 37 |
1N539 |
Diffused-Junction Silicon Rectifier, flanged-case, axial-lead-type |
RCA Solid State |
| 38 |
1N540 |
Diffused-Junction Silicon Rectifier, flanged-case, axial-lead-type |
RCA Solid State |
| 39 |
1N547 |
Diffused-Junction Silicon Rectifier, flanged-case, axial-lead-type |
RCA Solid State |
| 40 |
HDJD-J822-SCR00 |
HDJD-J822-SCR00 · Color Management System Feedback Controller |
Agilent (Hewlett-Packard) |
| 41 |
HDJD-J822-SCR00 |
HDJD-J822-SCR00 · Color Management System Feedback Controller |
Agilent (Hewlett-Packard) |
| 42 |
K4E151611D-J |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 1K refresh cycle. |
Samsung Electronic |
| 43 |
K4E151612D-J |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 1K refresh cycle. |
Samsung Electronic |
| 44 |
K4E171611D-J |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. |
Samsung Electronic |
| 45 |
K4E171612D-J |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. |
Samsung Electronic |
| 46 |
K4E640412D-JC_L |
16M x 4 bit CMOS dynamic RAM with extended data out. 3.3V, 4K refresh cycle. |
Samsung Electronic |
| 47 |
K4E660412D-JC_L |
16M x 4 bit CMOS dynamic RAM with extended data out. 3.3V, 8K refresh cycle. |
Samsung Electronic |
| 48 |
K4F151611D-J |
1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 1K refresh cycle. |
Samsung Electronic |
| 49 |
K4F151612D-J |
1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 1K refresh cycle. |
Samsung Electronic |
| 50 |
K4F171611D-J |
1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 4K refresh cycle. |
Samsung Electronic |
| 51 |
K4F171612D-J |
1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 4K refresh cycle. |
Samsung Electronic |
| 52 |
K4F640412D-JC_L |
16M x 4 bit CMOS dynamic RAM with fast page mode. 3.3V, 4K refresh cycle. |
Samsung Electronic |
| 53 |
K4F640812D-JC_L |
8M x 8bit CMOS dynamic RAM with fast page mode. 3.3V, 4K refresh cycle. |
Samsung Electronic |
| 54 |
K4F660412D-JC_L |
16M x 4 bit CMOS dynamic RAM with fast page mode. 3.3V, 8K refresh cycle. |
Samsung Electronic |
| 55 |
K4F660812D-JC_L |
8M x 8bit CMOS dynamic RAM with fast page mode. 3.3V, 8K refresh cycle. |
Samsung Electronic |
| 56 |
K6R1004C1D-JC(I)10 |
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. |
Samsung Electronic |
| 57 |
K6R1004C1D-JC(I)10_12 |
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. |
Samsung Electronic |
| 58 |
K6R1004C1D-JC(I)12 |
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. |
Samsung Electronic |
| 59 |
K6R1004C1D-JC10 |
256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
Samsung Electronic |
| 60 |
K6R1004C1D-JI10 |
256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
Samsung Electronic |
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