No. |
Part Name |
Description |
Manufacturer |
31 |
1N3210R |
15 Amp Stud-mounted Silicon Rectifier Diodes |
International Rectifier |
32 |
1N3212R |
15 Amp Stud-mounted Silicon Rectifier Diodes |
International Rectifier |
33 |
1N3213R |
15 Amp Stud-mounted Silicon Rectifier Diodes |
International Rectifier |
34 |
2N6781 |
60 V, 06 ohm, N-channel enhancement-mode D-MOS power FET |
Topaz Semiconductor |
35 |
2N6782 |
100 V, 06 ohm, N-channel enhancement-mode D-MOS power FET |
Topaz Semiconductor |
36 |
2N7000 |
60 V, 5 ohm, N-channel enhancement-mode D-MOS power FET |
Topaz Semiconductor |
37 |
2N7104 |
30 V, 70 ohm, N-channel enhancement-mode D-MOS FET switch |
Topaz Semiconductor |
38 |
2N7105 |
30 V, 70 ohm, N-channel enhancement-mode D-MOS FET switch |
Topaz Semiconductor |
39 |
2N7106 |
10 V, 70 ohm, N-channel enhancement-mode D-MOS FET switch |
Topaz Semiconductor |
40 |
2N7107 |
10 V, 70 ohm, N-channel enhancement-mode D-MOS FET switch |
Topaz Semiconductor |
41 |
2N7108 |
20 V, 70 ohm, N-channel enhancement-mode D-MOS FET switch |
Topaz Semiconductor |
42 |
2N7109 |
20 V, 70 ohm, N-channel enhancement-mode D-MOS FET switch |
Topaz Semiconductor |
43 |
2SC1120 |
Silicon NPN epitaxial planar transistor 400MHz Land-Mobil Radio RF power amplifier applications (low supply voltage use) |
TOSHIBA |
44 |
2SC1121 |
Silicon NPN epitaxial planar transistor 400MHz Land-Mobil Radio RF power amplifier applications (low supply voltage use) |
TOSHIBA |
45 |
2SC1122A |
Silicon NPN epitaxial planar transistor 400MHz Land-Mobil Radio Output Stage applications (low supply voltage use) |
TOSHIBA |
46 |
2SJ460(M) |
Pch D-MOSFET SST 50V/0.1A |
NEC |
47 |
2SJ460(M)-T |
Pch D-MOSFET SST 50V/0.1A |
NEC |
48 |
2SJ460-T/JM |
Pch D-MOSFET SST 50V/0.1A |
NEC |
49 |
2SJ460/JM |
Pch D-MOSFET SST 50V/0.1A |
NEC |
50 |
2SK2541(M) |
Nch D-MOSFET SST 50V/0.1A |
NEC |
51 |
2SK2541(M)-T |
Nch D-MOSFET SST 50V/0.1A |
NEC |
52 |
2SK2541-T/JM |
Nch D-MOSFET SST 50V/0.1A |
NEC |
53 |
2SK2541/JM |
Nch D-MOSFET SST 50V/0.1A |
NEC |
54 |
54F413D-MQB |
64 x 4 First-In First-Out Buffer Memory with Parallel I/O |
National Semiconductor |
55 |
74F413D-MQB |
64 x 4 First-In First-Out Buffer Memory with Parallel I/O |
National Semiconductor |
56 |
74F413D-MQB |
64 x 4 First-In First-Out Buffer Memory with Parallel I/O |
National Semiconductor |
57 |
AGM1264D-MEBBD-T |
0.3-7.0V; 1.0mA; number of dots: 128 x 64dots; dot size:0.39 x 0.55mm; dot pitch:0.44 x 0.60mm; AZ display |
AZ Displays |
58 |
AGM1264D-MEBBH-T |
0.3-7.0V; 1.0mA; number of dots: 128 x 64dots; dot size:0.39 x 0.55mm; dot pitch:0.44 x 0.60mm; AZ display |
AZ Displays |
59 |
AGM1264D-MEBBS-T |
0.3-7.0V; 1.0mA; number of dots: 128 x 64dots; dot size:0.39 x 0.55mm; dot pitch:0.44 x 0.60mm; AZ display |
AZ Displays |
60 |
AGM1264D-MEBBW-T |
0.3-7.0V; 1.0mA; number of dots: 128 x 64dots; dot size:0.39 x 0.55mm; dot pitch:0.44 x 0.60mm; AZ display |
AZ Displays |
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