| No. |
Part Name |
Description |
Manufacturer |
| 31 |
JANSD2N5796AU |
BJT( BiPolar Junction Transistor) |
Microsemi |
| 32 |
JANSD2N5796AUC |
BJT( BiPolar Junction Transistor) |
Microsemi |
| 33 |
MTD2N50E |
TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS(on) = 3.6 OHM |
Motorola |
| 34 |
MTD2N50E |
OBSOLETE - Power MOSFET 2 Amps, 500 Volts |
ON Semiconductor |
| 35 |
MTD2N50E-D |
Power MOSFET 2 Amps, 500 Volts N-Channel DPAK |
ON Semiconductor |
| 36 |
PHD2N50E |
PowerMOS transistors Avalanche energy rated |
Philips |
| 37 |
STD2N50 |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
| 38 |
STD2N50 |
N-CHANNEL MOSFET |
ST Microelectronics |
| 39 |
STD2N50-1 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
SGS Thomson Microelectronics |
| 40 |
STD2N50-1 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
ST Microelectronics |
| | | |
