No. |
Part Name |
Description |
Manufacturer |
31 |
MTD3N25E |
3 Amp DPAK Surface Mount Products, N-Channel, VDSS 250 |
ON Semiconductor |
32 |
MTD3N25E-D |
TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
33 |
NTMD3N08LR2 |
Power MOSFET 2.3 Amps, 80 Volts N-Channel Enhancement -Mode SO-8 Dual Package |
ON Semiconductor |
34 |
NTMD3N08LR2-D |
Power MOSFET 2.3 Amps, 80 Volts N-Channel Enhancement-Mode SO-8 Dual Package |
ON Semiconductor |
35 |
PHD3N20E |
PowerMOS transistor |
Philips |
36 |
PHD3N20L |
PowerMOS transistor Logic level FET |
Philips |
37 |
PHD3N40E |
PowerMOS transistors Avalanche energy rated |
Philips |
38 |
PHKD3NQ10T |
Dual N-channel TrenchMOS standard level FET |
Nexperia |
39 |
PHKD3NQ10T |
Dual N-channel TrenchMOS standard level FET |
NXP Semiconductors |
40 |
PHKD3NQ10T |
Dual N-channel TrenchMOS(tm) transistor |
Philips |
41 |
RFD3N08 |
3A/ 80V/ 0.800 Ohm/ Logic Level/ N-Channel Power MOSFETs |
Intersil |
42 |
RFD3N08L |
3A/ 80V/ 0.800 Ohm/ Logic Level/ N-Channel Power MOSFETs |
Intersil |
43 |
RFD3N08LSM |
3A/ 80V/ 0.800 Ohm/ Logic Level/ N-Channel Power MOSFETs |
Intersil |
44 |
STD3N25 |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
45 |
STD3N25 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
SGS Thomson Microelectronics |
46 |
STD3N25 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
ST Microelectronics |
47 |
STD3N30 |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
48 |
STD3N30-1 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
SGS Thomson Microelectronics |
49 |
STD3N30-1 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
ST Microelectronics |
50 |
STD3N30L |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
51 |
STD3N30L-1 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
SGS Thomson Microelectronics |
52 |
STD3N30L-1 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
ST Microelectronics |
53 |
STD3N40K3 |
N-channel 400 V, 2.7 Ohm typ., 2 A SuperMESH3(TM) Power MOSFET in a DPAK package |
ST Microelectronics |
54 |
STD3N62K3 |
N-channel 620 V, 2.2 Ohm typ., 2.7 A SuperMESH3(TM) Power MOSFET in DPAK package |
ST Microelectronics |
55 |
STD3N80K5 |
N-channel 800 V, 2.8 Ohm typ., 2.5 A Zener-protected SuperMESH(TM) 5 Power MOSFET in DPAK package |
ST Microelectronics |
56 |
STD3NA50 |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
57 |
STD3NA50 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
SGS Thomson Microelectronics |
58 |
STD3NA50 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
ST Microelectronics |
59 |
STD3NB30 |
N - CHANNEL 300V - 1.8W - 3.2A - DPAK PowerMESH MOSFET |
SGS Thomson Microelectronics |
60 |
STD3NB30 |
N-CHANNEL 300V - 1.8 OHM - 3.2A DPAK POWERMESH MOSFET |
SGS Thomson Microelectronics |
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