No. |
Part Name |
Description |
Manufacturer |
31 |
HGTD3N60A4S |
600V, SMPS Series N-Channel IGBT |
Fairchild Semiconductor |
32 |
HGTD3N60A4S |
600V/ SMPS Series N-Channel IGBT |
Intersil |
33 |
HGTD3N60B3S |
7A, 600V, UFS Series N-Channel IGBTs |
Fairchild Semiconductor |
34 |
HGTD3N60B3S |
7A/ 600V/ UFS Series N-Channel IGBTs |
Intersil |
35 |
HGTD3N60C3 |
6A, 600V, UFS Series N-Channel IGBTs |
Fairchild Semiconductor |
36 |
HGTD3N60C3S |
6A, 600V, UFS Series N-Channel IGBTs |
Fairchild Semiconductor |
37 |
HGTD3N60C3S |
6A/ 600V/ UFS Series N-Channel IGBTs |
Intersil |
38 |
MTD3N25E |
TMOS POWER FET 3 AMPERES 250 VOLTS RDS(on) = 1.4 OHM |
Motorola |
39 |
MTD3N25E |
3 Amp DPAK Surface Mount Products, N-Channel, VDSS 250 |
ON Semiconductor |
40 |
MTD3N25E-D |
TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
41 |
NTMD3N08LR2 |
Power MOSFET 2.3 Amps, 80 Volts N-Channel Enhancement -Mode SO-8 Dual Package |
ON Semiconductor |
42 |
NTMD3N08LR2-D |
Power MOSFET 2.3 Amps, 80 Volts N-Channel Enhancement-Mode SO-8 Dual Package |
ON Semiconductor |
43 |
PHD3N20E |
PowerMOS transistor |
Philips |
44 |
PHD3N20L |
PowerMOS transistor Logic level FET |
Philips |
45 |
PHD3N40E |
PowerMOS transistors Avalanche energy rated |
Philips |
46 |
PHKD3NQ10T |
Dual N-channel TrenchMOS standard level FET |
Nexperia |
47 |
PHKD3NQ10T |
Dual N-channel TrenchMOS standard level FET |
NXP Semiconductors |
48 |
PHKD3NQ10T |
Dual N-channel TrenchMOS(tm) transistor |
Philips |
49 |
RFD3N08 |
3A/ 80V/ 0.800 Ohm/ Logic Level/ N-Channel Power MOSFETs |
Intersil |
50 |
RFD3N08L |
3A/ 80V/ 0.800 Ohm/ Logic Level/ N-Channel Power MOSFETs |
Intersil |
51 |
RFD3N08LSM |
3A/ 80V/ 0.800 Ohm/ Logic Level/ N-Channel Power MOSFETs |
Intersil |
52 |
STD3N25 |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
53 |
STD3N25 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
SGS Thomson Microelectronics |
54 |
STD3N25 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
ST Microelectronics |
55 |
STD3N30 |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
56 |
STD3N30-1 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
SGS Thomson Microelectronics |
57 |
STD3N30-1 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
ST Microelectronics |
58 |
STD3N30L |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
59 |
STD3N30L-1 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
SGS Thomson Microelectronics |
60 |
STD3N30L-1 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
ST Microelectronics |
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