| No. |
Part Name |
Description |
Manufacturer |
| 31 |
MTD6N15 |
TMOS POWER FET 6.0 AMPERES 150 VOLTS RDS(on) = 0.3 OHM |
Motorola |
| 32 |
MTD6N15 |
TMOS Power 150V .3R |
ON Semiconductor |
| 33 |
MTD6N15-D |
Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 34 |
MTD6N15T4 |
TMOS Power 150V .3R |
ON Semiconductor |
| 35 |
MTD6N15T4G |
TMOS Power 150V .3R |
ON Semiconductor |
| 36 |
MTD6N20E |
Power MOSFET 6 Amps, 200 Volts |
ON Semiconductor |
| 37 |
MTD6N20E-D |
Power MOSFET 6 Amps, 200 Volts N-Channel DPAK |
ON Semiconductor |
| 38 |
MTD6N20ET4 |
Power MOSFET 6 Amps, 200 Volts |
ON Semiconductor |
| 39 |
MTD6N20ET4G |
Power MOSFET 6 Amps, 200 Volts |
ON Semiconductor |
| 40 |
NTD6N40 |
Power MOSFET 6 Amps, 400 Volts |
ON Semiconductor |
| 41 |
NTD6N40-D |
Power MOSFET 6 Amps, 400 Volts N-Channel DPAK |
ON Semiconductor |
| 42 |
NTMD6N02 |
Power MOSFET 6.0 Amps, 20 Volts |
ON Semiconductor |
| 43 |
NTMD6N02R2 |
Power MOSFET 6.0 Amps, 20 Volts |
ON Semiconductor |
| 44 |
NTMD6N02R2-D |
Power MOSFET 6.0 Amps, 20 Volts N-Channel Enhancement Mode Dual SO-8 Package |
ON Semiconductor |
| 45 |
NTMD6N03 |
30V HD3e SO8 Dual |
ON Semiconductor |
| 46 |
NTMD6N03R2 |
Power MOSFET |
ON Semiconductor |
| 47 |
NTMD6N04R2 |
NTMD6N04R2G 40V, 6.0A, Dual N-Channel SOIC-8 |
ON Semiconductor |
| 48 |
NTMD6N04R2 |
NTMD6N04R2G 40V, 6.0A, Dual N-Channel SOIC-8 |
ON Semiconductor |
| 49 |
NTMSD6N303 |
30V FETKY® Complementary SO8 Dual |
ON Semiconductor |
| 50 |
NTMSD6N303R2 |
Power MOSFET 6 Amps, 30 Volts N-Channel SO-8 FETKY |
ON Semiconductor |
| 51 |
PHD6N10E |
PowerMOS transistor |
Philips |
| 52 |
PHKD6N02LT |
Dual N-channel TrenchMOS logic level FET |
Nexperia |
| 53 |
PHKD6N02LT |
Dual N-channel TrenchMOS logic level FET |
NXP Semiconductors |
| 54 |
PHKD6N02LT |
Dual N-channel enhancement mode field effect transistor |
Philips |
| 55 |
STD6N10 |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
| 56 |
STD6N10 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
SGS Thomson Microelectronics |
| 57 |
STD6N10 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
ST Microelectronics |
| 58 |
STD6N52K3 |
N-channel 525 V, 1 Ohm, 5 A, DPAK SuperMESH3(TM) Power MOSFET |
ST Microelectronics |
| 59 |
STD6N60M2 |
N-channel 600 V, 1.06 Ohm typ., 4.5 A MDmesh II Plus(TM) low Qg Power MOSFET in DPAK package |
ST Microelectronics |
| 60 |
STD6N62K3 |
N-channel 620 V, 0.95 Ohm, 5.5 A SuperMESH3(TM) Power MOSFET in DPAK |
ST Microelectronics |
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