| No. |
Part Name |
Description |
Manufacturer |
| 31 |
Q62702-G0041 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 9 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz 3 dB-bandwidth: DC to 2.4 GHz) |
Siemens |
| 32 |
Q62702-G0042 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 11 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz) |
Siemens |
| 33 |
Q62702-G0043 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 16 dB typical gain at 1.0 GHz 12 dBm typical P-1dB at 1.0 GHz) |
Siemens |
| 34 |
Q62703-F97 |
GaAs FET (Low noise Fmin = 1.4 dB @ 4 GHz High gain 11.5 dB typ. @ 4 GHz) |
Siemens |
| 35 |
SGA-2386 |
DC-2800 MHz, 2.7V, silicon germanium HBT cascadeable gain block. High gain: 17.2 dB typ. at 850 MHz. |
Stanford Microdevices |
| | | |
