No. |
Part Name |
Description |
Manufacturer |
31 |
HYB25D256160CE-6 |
DDR SDRAM Components - 256Mbit (16Mx16) DDR333 (2.5-3-3) |
Infineon |
32 |
HYB25D256400BC-6 |
DDR SDRAM Components - 256Mb (64Mx4) FBGA DDR333 (2.5-3-3) |
Infineon |
33 |
HYB25D256400CC-6 |
DDR SDRAM Components - 256Mb (64Mx4) FBGA DDR333 (2.5-3-3); available 2Q04 |
Infineon |
34 |
HYB25D256800BC-6 |
DDR SDRAM Components - 256Mb (32Mx8) FBGA DDR333 (2.5-3-3) |
Infineon |
35 |
HYB25D256800BT-6 |
DDR SDRAM Components - 256Mbit (32Mx8) DDR333 (2.5-3-3) |
Infineon |
36 |
HYB25D256800CC-6 |
DDR SDRAM Components - 256Mb (32Mx8) FBGA DDR333 (2.5-3-3); available 2Q04 |
Infineon |
37 |
HYB25D256800CE-6 |
DDR SDRAM Components - 256Mbit (32Mx8) DDR333 (2.5-3-3) |
Infineon |
38 |
HYB25D256800CEL-6 |
DDR SDRAM Components - 256Mbit (32Mx8) DDR333 (2.5-3-3) |
Infineon |
39 |
HYB25D256800CF-6 |
DDR SDRAM Components - 256Mb (32Mx8) FBGA DDR333 (2.5-3-3) Available 2Q04 |
Infineon |
40 |
HYB25D512160AT-6 |
DDR SDRAM Components - 512Mb (32Mx16) DDR333 (2.5-3-3) |
Infineon |
41 |
HYB25D512160BE-6 |
DDR SDRAM Components - 512Mb (32Mx16) DDR333 (2.5-3-3) |
Infineon |
42 |
HYB25D512400BC-6 |
DDR SDRAM Components - 512Mb FBGA (128Mx4) DDR333 (2.5-3-3) |
Infineon |
43 |
HYB25D512800AT-6 |
DDR SDRAM Components - 512Mb (64Mx8) DDR333 (2.5-3-3) |
Infineon |
44 |
HYB25D512800BC-6 |
DDR SDRAM Components - 512Mb FBGA (64Mx8) DDR333 (2.5-3-3) |
Infineon |
45 |
HYB25D512800BE-6 |
DDR SDRAM Components - 512Mb (64Mx8) DDR333 (2.5-3-3) |
Infineon |
46 |
IR3506M |
The IR3506 Phase IC combined with IR3522 xPHASE3 Control ICs implements a full featured DDR3 power solution. |
International Rectifier |
47 |
IR3506MPBF |
The IR3506 Phase IC combined with IR3522 xPHASE3 Control ICs implements a full featured DDR3 power solution. |
International Rectifier |
48 |
IR3506MTRPBF |
The IR3506 Phase IC combined with IR3522 xPHASE3 Control ICs implements a full featured DDR3 power solution. |
International Rectifier |
49 |
IR3522M |
The IR3522 Control IC combined with IR3506 xPHASE3 Phase ICs implements a full featured DDR3 power solution. |
International Rectifier |
50 |
IR3522MTRPBF |
The IR3522 Control IC combined with IR3506 xPHASE3 Phase ICs implements a full featured DDR3 power solution. |
International Rectifier |
51 |
K4J52324QC |
512Mbit GDDR3 SDRAM |
Samsung Electronic |
52 |
K4J52324QC-BC14 |
512Mbit GDDR3 SDRAM |
Samsung Electronic |
53 |
K4J52324QC-BC16 |
512Mbit GDDR3 SDRAM |
Samsung Electronic |
54 |
K4J52324QC-BC20 |
512Mbit GDDR3 SDRAM |
Samsung Electronic |
55 |
K4J52324QC-BJ12 |
512Mbit GDDR3 SDRAM |
Samsung Electronic |
56 |
K4J52324QC-BJ14 |
512Mbit GDDR3 SDRAM |
Samsung Electronic |
57 |
K4J55323QF-GC |
256Mbit GDDR3 SDRAM |
Samsung Electronic |
58 |
K4J55323QF-GC14 |
256Mbit GDDR3 SDRAM |
Samsung Electronic |
59 |
K4J55323QF-GC15 |
256Mbit GDDR3 SDRAM |
Samsung Electronic |
60 |
K4J55323QF-GC16 |
256Mbit GDDR3 SDRAM |
Samsung Electronic |
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