No. |
Part Name |
Description |
Manufacturer |
31 |
NDH8502P |
Dual P-Channel Enhancement Mode Field Effect Transistor |
National Semiconductor |
32 |
NDH8503N |
Dual N-Channel Enhancement Mode Field Effect Transistor [Obsolete] |
Fairchild Semiconductor |
33 |
NDH8503N |
Dual N-Channel Enhancement Mode Field Effect Transistor |
National Semiconductor |
34 |
NDH8504P |
Dual P-Channel Enhancement Mode Field Effect Transistor [Not recommended for new designs] |
Fairchild Semiconductor |
35 |
NDH8504P |
Dual P-Channel Enhancement Mode Field Effect Transistor |
National Semiconductor |
36 |
NDH8505N |
Dual N-Channel Enhancement Mode Field Effect Transistor |
National Semiconductor |
37 |
NDH8507N |
Dual N-Channel Enhancement Mode Field Effect Transistor |
National Semiconductor |
38 |
NDH8508P |
Dual P-Channel Enhancement Mode Field Effect Transistor |
National Semiconductor |
39 |
NDH8520C |
Dual N & P-Channel Enhancement Mode Field Effect Transistor [Obsolete] |
Fairchild Semiconductor |
40 |
NDH8520C |
Dual N & P-Channel Enhancement Mode Field Effect Transistor |
National Semiconductor |
41 |
NDH8521C |
Dual N & P-Channel Enhancement Mode Field Effect Transistor |
Fairchild Semiconductor |
42 |
NDH853N |
Length/Height 1.02 mm Width 4.55 mm Depth 4.06 mm Power dissipation 1.8 W Transistor polarity N Channel Current Id cont. 7.6 A Voltage Vgs th max. 4.5 V Voltage Vds max 30 V |
Fairchild Semiconductor |
43 |
NDH853N |
N-Channel Enhancement Mode Field Effect Transistor |
National Semiconductor |
44 |
NDH854P |
Length/Height 1.02 mm Width 4.55 mm Depth 4.06 mm Power dissipation 1.8 W Transistor polarity P Channel Current Id cont. 5.1 A Voltage Vgs th max. 4.5 V Voltage Vds max 30 V |
Fairchild Semiconductor |
45 |
NDH854P |
P-Channel Enhancement Mode Field Effect Transistor |
National Semiconductor |
| | | |