No. |
Part Name |
Description |
Manufacturer |
31 |
2SA970 |
Transistor Silicon PNP Epitaxial Type (PCT process) Low Noise Audio Amplifier Applications |
TOSHIBA |
32 |
2SC1000 |
Silicon NPN epitaxial planar transistor, low noise audio amplifier applications |
TOSHIBA |
33 |
2SC1000G |
Silicon NPN epitaxial planar transistor, low noise audio amplifier applications |
TOSHIBA |
34 |
2SC2229 |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE BLACK AND WHITE TV VIDEO OUTPUT, HIGH VOLTAGE Switching, Driver Stage Audio Amplifier Applications |
TOSHIBA |
35 |
2SC2240 |
Transistor Silicon NPN Epitaxial Type (PCT process) Low Noise Audio Amplifier Applications |
TOSHIBA |
36 |
2SC2337 |
Silicon epitaxial transistor built in emitter balast resistors, designed for use in high power high fidelity audio amplifier applications |
NEC |
37 |
2SC2337A |
Silicon epitaxial transistor built in emitter balast resistors, designed for use in high power high fidelity audio amplifier applications |
NEC |
38 |
2SC2458 |
Transistor Silicon NPN Epitaxial Type (PCT process) Audio Amplifier Applications |
TOSHIBA |
39 |
2SC2458(L) |
Transistor Silicon NPN Epitaxial Type (PCT process) Audio Amplifier Applications Low Noise Audio Amplifier Applications |
TOSHIBA |
40 |
2SC2458(L) |
Transistor Silicon NPN Epitaxial Type (PCT process) Audio Amplifier Applications Low Noise Audio Amplifier Applications |
TOSHIBA |
41 |
2SC2458L |
TRANSISTOR (AUDIO/ LOW NOISE AUDIO AMPLIFIER APPLICATIONS) |
TOSHIBA |
42 |
2SC2459 |
Transistor Silicon NPN Epitaxial Type (PCT process) Audio Amplifier Applications |
TOSHIBA |
43 |
2SC2710 |
Transistor Silicon NPN Epitaxial Type (PCT process) For Audio Amplifier Applications |
TOSHIBA |
44 |
2SC3112 |
Transistor Silicon NPN Epitaxial Type (PCT process) For Audio Amplifier and Switching Applications |
TOSHIBA |
45 |
2SC3113 |
Transistor Silicon NPN Epitaxial Type For Audio Amplifier and Switching Applications |
TOSHIBA |
46 |
2SC3329 |
Transistor Silicon NPN Epitaxial Type (PCT process) For Low Noise Audio Amplifier Applications and Recommended for The First Stages of MC Head Amplifiers |
TOSHIBA |
47 |
2SC3381 |
NPN EPITAXIAL TYPE (LOW NOISE AUDIO AMPLIFIER APPLICATIONS RECOMMENDED FOR CASCODE/ CURRENT MIRROR CIRCUIT OF THE FIRST STAGE OF PRE/ MAIN AMPLIFIERS) |
TOSHIBA |
48 |
2SC3964 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE SWITCHING APPLICATIONS SOLENOID DRIVE APPLICATIONS TEMPERATURE COMPENSATED FOR AUDIO AMPLIFIER OUTPUT STAGE |
TOSHIBA |
49 |
2SC5248 |
Transistor for audio amplifier output stages / TV velocity modulation |
ROHM |
50 |
2SC732TM |
NPN EPITAXIAL TYPE (LOW NOISE AUDIO AMPLIFIER APPLICATIONS) |
TOSHIBA |
51 |
2SC733 |
Silicon NPN epitaxial planar transistor, audio amplifier applications |
TOSHIBA |
52 |
2SJ108 |
Field Effect Transistor Silicon P Channel Junction Type Low Noise Audio Amplifier Applications |
TOSHIBA |
53 |
2SJ74 |
Field Effect Transistor Silicon P Channel Junction Type Low Noise Audio Amplifier Applications |
TOSHIBA |
54 |
2SK117 |
Field Effect Transistor Silicon N Channel Junction Type Low Noise Audio Amplifier Applications |
TOSHIBA |
55 |
2SK170 |
Field Effect Transistor Silicon N Channel Junction Type Low Noise Audio Amplifier Applications |
TOSHIBA |
56 |
2SK184 |
Field Effect Transistor Silicon N Channel Junction Type Low Noise Audio Amplifier Applications |
TOSHIBA |
57 |
2SK3320 |
Field Effect Transistor Silicon N Channel Junction Type For Low Noise Audio Amplifier Applications |
TOSHIBA |
58 |
2SK3669 |
Field Effect Transistor Silicon N Channel MOS Type (PI-MOS VII) Switching Regulators, for Audio Amplifier and Motor Drive Applications |
TOSHIBA |
59 |
2SK369 |
Field Effect Transistor Silicon N Channel Junction Type For Low Noise Audio Amplifier Applications |
TOSHIBA |
60 |
2SK370 |
Field Effect Transistor Silicon N Channel Junction Type For Low Noise Audio Amplifier Applications |
TOSHIBA |
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