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Datasheets for DRA

Datasheets found :: 18535
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No. Part Name Description Manufacturer
31 2N6762 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.5A. General Electric Solid State
32 2N6764 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 38A. General Electric Solid State
33 2N6764 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 38A. General Electric Solid State
34 2N6766 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 30A. General Electric Solid State
35 2N6766 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 30A. General Electric Solid State
36 2N7002 N-channel transistor. Drain-sourse voltage 60 V. Comchip Technology
37 2SC5094 Dual Inverter (open drain) with 3.6 V Tolerant Input and Output TOSHIBA
38 3D14A-P DIP-14 PIN OUTLINE DRAWING PACKAGE TOSHIBA
39 3D16A-P DIP 16 PIN OUTLINE DRAWING PACKAGE TOSHIBA
40 3D18A-P DIP 18 PIN OUTLINE DRAWING PACKAGE TOSHIBA
41 3D8A-P DIP-8 PIN OUTLINE DRAWING PACKAGE TOSHIBA
42 3DSD1280-323H 1.28 GBit Synchronous DRAM - Hermetic package 3D PLUS
43 3DSD1280-883D-S 1.28 GBit Synchronous DRAM - Hermetic package 3D PLUS
44 3DSD1280-PROTO 1.28 GBit Synchronous DRAM - Hermetic package 3D PLUS
45 4-LEAD PLASTIC Outline drawings SGS-ATES
46 42S16800A 16Meg x 8/ 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM Integrated Silicon Solution Inc
47 4423 Precision Quadrature Oscillator Burr Brown
48 4423 Precision Quadrature Oscillator Texas Instruments
49 4423P Precision Quadrature Oscillator Texas Instruments
50 4X16E43V 4 MEG x 16 EDO DRAM etc
51 4X16E83V 4 MEG x 16 EDO DRAM etc
52 4X16E83VTW-6 4 MEG x 16 EDO DRAM etc
53 5029BP QUAD 2-input NAND gate with N-Channel open drain output TOSHIBA
54 50S116T 512K x 2 Banks x 16 BITS SDRAM Ceramate
55 50S116T-5 High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 200MHz. Self refresh current (max) 1mA Ceramate
56 50S116T-6 High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 166MHz. Self refresh current (max) 1mA Ceramate
57 50S116T-7 High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 143MHz. Self refresh current (max) 1mA Ceramate
58 54AC05 Hex Inverter with Open Drain Outputs National Semiconductor
59 54AC05D Hex Inverter with Open Drain Outputs National Semiconductor
60 54AC05F Hex Inverter with Open Drain Outputs National Semiconductor


Datasheets found :: 18535
Page: | 1 | 2 | 3 | 4 | 5 | 6 |



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