No. |
Part Name |
Description |
Manufacturer |
31 |
2N6762 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.5A. |
General Electric Solid State |
32 |
2N6764 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 38A. |
General Electric Solid State |
33 |
2N6764 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 38A. |
General Electric Solid State |
34 |
2N6766 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 30A. |
General Electric Solid State |
35 |
2N6766 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 30A. |
General Electric Solid State |
36 |
2N7002 |
N-channel transistor. Drain-sourse voltage 60 V. |
Comchip Technology |
37 |
2SC5094 |
Dual Inverter (open drain) with 3.6 V Tolerant Input and Output |
TOSHIBA |
38 |
3D14A-P |
DIP-14 PIN OUTLINE DRAWING PACKAGE |
TOSHIBA |
39 |
3D16A-P |
DIP 16 PIN OUTLINE DRAWING PACKAGE |
TOSHIBA |
40 |
3D18A-P |
DIP 18 PIN OUTLINE DRAWING PACKAGE |
TOSHIBA |
41 |
3D8A-P |
DIP-8 PIN OUTLINE DRAWING PACKAGE |
TOSHIBA |
42 |
3DSD1280-323H |
1.28 GBit Synchronous DRAM - Hermetic package |
3D PLUS |
43 |
3DSD1280-883D-S |
1.28 GBit Synchronous DRAM - Hermetic package |
3D PLUS |
44 |
3DSD1280-PROTO |
1.28 GBit Synchronous DRAM - Hermetic package |
3D PLUS |
45 |
4-LEAD PLASTIC |
Outline drawings |
SGS-ATES |
46 |
42S16800A |
16Meg x 8/ 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
Integrated Silicon Solution Inc |
47 |
4423 |
Precision Quadrature Oscillator |
Burr Brown |
48 |
4423 |
Precision Quadrature Oscillator |
Texas Instruments |
49 |
4423P |
Precision Quadrature Oscillator |
Texas Instruments |
50 |
4X16E43V |
4 MEG x 16 EDO DRAM |
etc |
51 |
4X16E83V |
4 MEG x 16 EDO DRAM |
etc |
52 |
4X16E83VTW-6 |
4 MEG x 16 EDO DRAM |
etc |
53 |
5029BP |
QUAD 2-input NAND gate with N-Channel open drain output |
TOSHIBA |
54 |
50S116T |
512K x 2 Banks x 16 BITS SDRAM |
Ceramate |
55 |
50S116T-5 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 200MHz. Self refresh current (max) 1mA |
Ceramate |
56 |
50S116T-6 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 166MHz. Self refresh current (max) 1mA |
Ceramate |
57 |
50S116T-7 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 143MHz. Self refresh current (max) 1mA |
Ceramate |
58 |
54AC05 |
Hex Inverter with Open Drain Outputs |
National Semiconductor |
59 |
54AC05D |
Hex Inverter with Open Drain Outputs |
National Semiconductor |
60 |
54AC05F |
Hex Inverter with Open Drain Outputs |
National Semiconductor |
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