| No. |
Part Name |
Description |
Manufacturer |
| 31 |
2SA1316 |
Transistor Silicon PNP Epitaxial Type (PCT process) For Low Noise Audio Amplifier Applications and Recommended for the First Stages of MC Head Amplifiers |
TOSHIBA |
| 32 |
2SA1349 |
TRANSISTOR (LOW NOISE AUDIO AMPLIFIER APPLICATIONS. RECOMMENDED FOR CASCADE/ CURRENT MIRROR CIRCUIT APPLICATIONS OF THE FIRST STAGES OF PRE/ MAIN AMPL |
TOSHIBA |
| 33 |
2SC3329 |
Transistor Silicon NPN Epitaxial Type (PCT process) For Low Noise Audio Amplifier Applications and Recommended for The First Stages of MC Head Amplifiers |
TOSHIBA |
| 34 |
2SC3381 |
NPN EPITAXIAL TYPE (LOW NOISE AUDIO AMPLIFIER APPLICATIONS RECOMMENDED FOR CASCODE/ CURRENT MIRROR CIRCUIT OF THE FIRST STAGE OF PRE/ MAIN AMPLIFIERS) |
TOSHIBA |
| 35 |
2SC383 |
Silicon NPN epitaxial planar transistor, TV Picture Final IF Amplifier Applications |
TOSHIBA |
| 36 |
2SK2157-T1 |
N-channel MOS type field effect transistor |
NEC |
| 37 |
2SK2157-T2 |
N-channel MOS type field effect transistor |
NEC |
| 38 |
2SK334 |
Silicon N-Channel Junction-Type Field Effect TR For CONDENSER MICROPHONES |
SANYO |
| 39 |
2SK679A-T |
MOS type field effect transistor |
NEC |
| 40 |
2SK679A-T/JD |
MOS type field effect transistor |
NEC |
| 41 |
2SK679A-T/JM |
MOS type field effect transistor |
NEC |
| 42 |
2SK679A/JD |
MOS type field effect transistor |
NEC |
| 43 |
2SK679A/JM |
MOS type field effect transistor |
NEC |
| 44 |
3055L |
N-Channel Enhancement Mode Field Effect Transistor |
Chino-Excel Technology |
| 45 |
3D7303 |
MONOLITHIC TRIPLE FIXED DELAY LINE |
Data Delay Devices Inc |
| 46 |
3D7303 SERIES |
MONOLITHIC TRIPLE FIXED DELAY LINE |
Data Delay Devices Inc |
| 47 |
3D7304 |
MONOLITHIC QUADRUPLE FIXED DELAY LINE |
Data Delay Devices Inc |
| 48 |
3D7304 SERIES |
MONOLITHIC QUADRUPLE FIXED DELAY LINE |
Data Delay Devices Inc |
| 49 |
3N128 |
N-Channel Insulated-Gate Depletion-type Field-Effect Transistor |
Texas Instruments |
| 50 |
3N142 |
SILICON INSULATED GATE FIELD EFFECT TRANSISTOR |
General Electric Solid State |
| 51 |
3N153 |
SILICON INSULATED GATE FIELD EFFECT TRANSISTOR |
General Electric Solid State |
| 52 |
3N153 |
N-Channel Insulated-Gate Depletion-type Field-Effect Transistor |
Texas Instruments |
| 53 |
3N155 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 54 |
3N155A |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 55 |
3N156 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 56 |
3N156A |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 57 |
3N157 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 58 |
3N157A |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 59 |
3N158 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 60 |
3N158A |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| | | |
