| No. |
Part Name |
Description |
Manufacturer |
| 31 |
2N6073A |
Sensitive Gate Triacs |
ON Semiconductor |
| 32 |
2N6073A |
Sensitive Gate Triacs |
ON Semiconductor |
| 33 |
2N6073B |
Sensitive Gate Triacs |
ON Semiconductor |
| 34 |
2N6074 |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 500 V. |
Motorola |
| 35 |
2N6074A |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 500 V. |
Motorola |
| 36 |
2N6074B |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 500 V. |
Motorola |
| 37 |
2N6075 |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 600 V. |
Motorola |
| 38 |
2N6075A |
Sensitive Gate Triacs |
ON Semiconductor |
| 39 |
2N6075B |
Sensitive Gate Triacs |
ON Semiconductor |
| 40 |
2SK2331 |
N CHANNEL SINGLE GATE MODULATION DOPE TYPE (SHF BAND LOW NOISE AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 41 |
2SK2332 |
N CHANNEL SINGLE GATE MODULATION DOPE TYPE (SHF BAND LOW NOISE AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 42 |
2SK2496 |
RF Single Gate FETs |
TOSHIBA |
| 43 |
2SK2497 |
N CHANNEL SINGLE GATE MODULATION DOPE TYPE (SHF BAND LOW NOISE AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 44 |
2SK2856 |
N CHANNEL SINGLE GATE MODULATION DOPE TYPE (UHF BAND LOW NOISE AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 45 |
2SK3179 |
N CHANNEL SINGLE GATE MODULATION DOPE TYPE )UHF~SHF BAND LOW NOISE AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 46 |
350PEQ100W |
V(rrm/drm): 1000V; 520A RMS Di-vergence gate, hockey puk, inverter SCR |
International Rectifier |
| 47 |
350PEQ110W |
V(rrm/drm): 1100V; 520A RMS Di-vergence gate, hockey puk, inverter SCR |
International Rectifier |
| 48 |
350PEQ120W |
V(rrm/drm): 1200V; 520A RMS Di-vergence gate, hockey puk, inverter SCR |
International Rectifier |
| 49 |
350PEQ50W |
V(rrm/drm): 500V; 520A RMS Di-vergence gate, hockey puk, inverter SCR |
International Rectifier |
| 50 |
350PEQ60W |
V(rrm/drm): 600V; 520A RMS Di-vergence gate, hockey puk, inverter SCR |
International Rectifier |
| 51 |
350PEQ70W |
V(rrm/drm): 700V; 520A RMS Di-vergence gate, hockey puk, inverter SCR |
International Rectifier |
| 52 |
350PEQ80W |
V(rrm/drm): 800V; 520A RMS Di-vergence gate, hockey puk, inverter SCR |
International Rectifier |
| 53 |
350PEQ90W |
V(rrm/drm): 900V; 520A RMS Di-vergence gate, hockey puk, inverter SCR |
International Rectifier |
| 54 |
74125PC |
Quad 3-State-buffer (active low enable gate) |
TUNGSRAM |
| 55 |
74126PC |
Quad 3-State-buffer (active High enable gate) |
TUNGSRAM |
| 56 |
74AUP1T57GF |
Low-power configurable gate with voltage-level translator |
Nexperia |
| 57 |
74AUP1T57GF |
Low-power configurable gate with voltage-level translator |
NXP Semiconductors |
| 58 |
74AUP1T57GM |
Low-power configurable gate with voltage-level translator |
Nexperia |
| 59 |
74AUP1T57GM |
Low-power configurable gate with voltage-level translator |
NXP Semiconductors |
| 60 |
74AUP1T57GN |
Low-power configurable gate with voltage-level translator |
Nexperia |
| | | |
