| No. |
Part Name |
Description |
Manufacturer |
| 31 |
1H6 |
TECHINCAL SPECIFICATIONS OF MINIATURE HIGH EFFICIENCY RECTIFIER |
DC Components |
| 32 |
1H6 |
1.0A MINIATURE HIGH EFFICIENCY RECTIFIER |
Won-Top Electronics |
| 33 |
1H6-T3 |
1.0A MINIATURE HIGH EFFICIENCY RECTIFIER |
Won-Top Electronics |
| 34 |
1H6-TB |
1.0A MINIATURE HIGH EFFICIENCY RECTIFIER |
Won-Top Electronics |
| 35 |
1H7 |
TECHINCAL SPECIFICATIONS OF MINIATURE HIGH EFFICIENCY RECTIFIER |
DC Components |
| 36 |
1H7 |
1.0A MINIATURE HIGH EFFICIENCY RECTIFIER |
Won-Top Electronics |
| 37 |
1H7-T3 |
1.0A MINIATURE HIGH EFFICIENCY RECTIFIER |
Won-Top Electronics |
| 38 |
1H7-TB |
1.0A MINIATURE HIGH EFFICIENCY RECTIFIER |
Won-Top Electronics |
| 39 |
1H8 |
TECHINCAL SPECIFICATIONS OF MINIATURE HIGH EFFICIENCY RECTIFIER |
DC Components |
| 40 |
1H8 |
1.0A MINIATURE HIGH EFFICIENCY RECTIFIER |
Won-Top Electronics |
| 41 |
1N461A |
25 V, 500 mW general purpose high conductance diode |
BKC International Electronics |
| 42 |
1N461A |
General purpose high conductance diode. Working inverse voltage 25V. |
Fairchild Semiconductor |
| 43 |
1N462A |
60 V, 500 mW general purpose high conductance diode |
BKC International Electronics |
| 44 |
1N462A |
General purpose high conductance diode. Working inverse voltage 60V. |
Fairchild Semiconductor |
| 45 |
1N463A |
175 V, 500 mW general purpose high conductance diode |
BKC International Electronics |
| 46 |
1N463A |
General purpose high conductance diode. Working inverse voltage 175V. |
Fairchild Semiconductor |
| 47 |
1N464A |
125 V, 500 mW general purpose high conductance diode |
BKC International Electronics |
| 48 |
1N5194 |
General Purpose High-Temperatura Diode |
ITT Semiconductors |
| 49 |
1N5195 |
General Purpose High-Temperatura Diode |
ITT Semiconductors |
| 50 |
1N5196 |
General Purpose High-Temperatura Diode |
ITT Semiconductors |
| 51 |
1S1832 |
Rectifier Silicon Diffused Type High Speed Rectifier Applications (fast recovery) |
TOSHIBA |
| 52 |
1S1834 |
Rectifier Silicon Diffused Type High Speed Rectifier Applications (fast recovery) |
TOSHIBA |
| 53 |
1S1835 |
Rectifier Silicon Diffused Type High Speed Rectifier Applications (fast recovery) |
TOSHIBA |
| 54 |
1SS293 |
Diode Silicon Epitaxial Schottoky Barrier Type Low Voltage High Speed Switching |
TOSHIBA |
| 55 |
1SS294 |
Diode Silicon Epitaxial Schottoky Barrier Type Low Voltage High Speed Switching |
TOSHIBA |
| 56 |
1SS306 |
Diode Silicon Epitaxial Planar Type High Voltage,High Speed Switching Applications |
TOSHIBA |
| 57 |
1SS311 |
Diode Silicon Epitaxial Planar Type High Voltage,High Speed Switching Applications |
TOSHIBA |
| 58 |
1SS319 |
Diode Silicon Epitaxial Planar Type Low Voltage High Speed Switching |
TOSHIBA |
| 59 |
1SS321 |
Diode Silicon Epitaxial Planar Type Low Voltage High Speed Switching |
TOSHIBA |
| 60 |
1SS322 |
Diode Silicon Epitaxial Planar Type Low Voltage High Speed Switching |
TOSHIBA |
| | | |
