| No. |
Part Name |
Description |
Manufacturer |
| 31 |
MJE2955T |
PNP, silicon plastic power transistor. Designed for general-purpose switching and amplifier application. Vceo = 60Vdc, Vcb = 70Vdc, Veb = 5Vdc Ic = 10Adc, PD = 75W. |
USHA India LTD |
| 32 |
MJE2955T |
SILICON EPITAXIAL PLANAR TRANSISTOR |
Wing Shing Computer Components |
| 33 |
MJE2955T |
PNP PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER) |
Wing Shing Computer Components |
| 34 |
MJE2955T-D |
Complementary Silicon Plastic Power Transistors |
ON Semiconductor |
| 35 |
MJE2955TTU |
PNP Silicon Transistor |
Fairchild Semiconductor |
| 36 |
MJE3055 |
10 Ampere NPN Power Transistor 60 Volts, 90 Watts, plastic version of 2N3055, complementary to MJE2955 |
Motorola |
| 37 |
NTE295 |
Silicon NPN Transistor RF Power Output, Driver |
NTE Electronics |
| 38 |
NTE2953 |
MOSFET N-Channel, Enhancement Mode High Speed Switch |
NTE Electronics |
| 39 |
NTE2954 |
MOSFET N-Channel, Enhancement Mode High Speed Switch |
NTE Electronics |
| 40 |
NTE2955 |
MOSFET N-Channel, Enhancement Mode High Speed Switch |
NTE Electronics |
| 41 |
NTE2956 |
MOSFET N-Channel, Enhancement Mode High Speed Switch |
NTE Electronics |
| 42 |
NTE2957 |
MOSFET N-Channel, Enhancement Mode High Speed Switch |
NTE Electronics |
| 43 |
NTE2958 |
MOSFET N-Channel, Enhancement Mode High Speed Switch |
NTE Electronics |
| 44 |
NTE2959 |
MOSFET N-Channel, Enhancement Mode High Speed Switch |
NTE Electronics |
| 45 |
NX8564LE295-BC |
EA modulator integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 360 km DWDM applications. ITU-T wavelength 1529.55 nm. Frequency 196.00 THz. FC-UPC connector. |
NEC |
| 46 |
NX8564LE295-CC |
EA modulator integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 360 km DWDM applications. ITU-T wavelength 1529.55 nm. Frequency 196.00 THz. SC-UPC connector. |
NEC |
| 47 |
NX8565LE295-BC |
EA modulator integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 600 km DWDM applications. ITU-T wavelength 1529.55 nm. Frequency 196.00 THz. FC-UPC connector. |
NEC |
| 48 |
NX8565LE295-CC |
EA modulator integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 600 km DWDM applications. ITU-T wavelength 1529.55 nm. Frequency 196.00 THz. SC-UPC connector. |
NEC |
| 49 |
NX8566LE295-BC |
EA modulator integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 240 km DWDM applications. ITU-T wavelength 1529.55 nm. Frequency 196.00 THz. FC-UPC connector. |
NEC |
| 50 |
NX8566LE295-CC |
EA modulator integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 240 km DWDM applications. ITU-T wavelength 1529.55 nm. Frequency 196.00 THz. SC-UPC connector. |
NEC |
| 51 |
TCR2EE295 |
CMOS point regulator (single output) |
TOSHIBA |
| | | |
