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Datasheets found :: 33
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| No. | Part Name | Description | Manufacturer |
|---|---|---|---|
| 31 | K4E661612E, K4E641612E | 4M x 16bit CMOS Dynamic RAM with Extended Data Out Data Sheet | Samsung Electronic |
| 32 | NTE6416 | Bidirectional thyristor diode (SIDAC). Peak off voltage 45V. | NTE Electronics |
| 33 | Z86E6416VSC | CMOS Z8 microcontroller. ROM 32 KB, RAM 236 Bytes, I/O lines 52, 4.5 V to 5 V | Zilog |
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Datasheets found :: 33
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