| No. |
Part Name |
Description |
Manufacturer |
| 31 |
K4E661612D, K4E641612D |
4M x 16bit CMOS Dynamic RAM with Extended Data Out Data Sheet |
Samsung Electronic |
| 32 |
K4E661612D, K4E641612D |
4M x 16bit CMOS Dynamic RAM with Extended Data Out Data Sheet |
Samsung Electronic |
| 33 |
K4E661612E, K4E641612E |
4M x 16bit CMOS Dynamic RAM with Extended Data Out Data Sheet |
Samsung Electronic |
| 34 |
K4E661612E, K4E641612E |
4M x 16bit CMOS Dynamic RAM with Extended Data Out Data Sheet |
Samsung Electronic |
| 35 |
NE661M04 |
NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD |
NEC |
| 36 |
NE661M04-T2 |
NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD |
NEC |
| | | |
