No. |
Part Name |
Description |
Manufacturer |
31 |
1N756 |
8.2 V, 400 mW silicon linear diode |
BKC International Electronics |
32 |
1N756 |
500 mW silicon linear diode. Max zener impedance 8.0 Ohm, max zener voltage 8.2 V (Iz 20mA). |
Fairchild Semiconductor |
33 |
1N756A |
8.2 V, 400 mW silicon linear diode |
BKC International Electronics |
34 |
1N757 |
9.1 V, 400 mW silicon linear diode |
BKC International Electronics |
35 |
1N757 |
500 mW silicon linear diode. Max zener impedance 10.0 Ohm, max zener voltage 9.1 V (Iz 20mA). |
Fairchild Semiconductor |
36 |
1N757A |
9.1 V, 400 mW silicon linear diode |
BKC International Electronics |
37 |
1N758 |
10 V, 400 mW silicon linear diode |
BKC International Electronics |
38 |
1N758 |
500 mW silicon linear diode. Max zener impedance 17.0 Ohm, max zener voltage 10.0 V (Iz 20mA). |
Fairchild Semiconductor |
39 |
1N758A |
10 V, 400 mW silicon linear diode |
BKC International Electronics |
40 |
1N759 |
12 V, 400 mW silicon linear diode |
BKC International Electronics |
41 |
1N759 |
500 mW silicon linear diode. Max zener impedance 30.0 Ohm, max zener voltage 12.0 V (Iz 20mA). |
Fairchild Semiconductor |
42 |
1N759A |
12 V, 400 mW silicon linear diode |
BKC International Electronics |
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