| No. |
Part Name |
Description |
Manufacturer |
| 31 |
MAX9796EBX+TG45 |
2.3W, High-Power Class D Audio Subsystem with DirectDrive Headphone Amplifiers |
MAXIM - Dallas Semiconductor |
| 32 |
N80C186EBXX |
16-BIT HIGH-INTEGRATION EMBEDDED PROCESSORS |
Intel |
| 33 |
N80C188EBXX |
16-BIT HIGH-INTEGRATION EMBEDDED PROCESSORS |
Intel |
| 34 |
NL6EBX-DC110V |
NL-relay. 6PDT, 2 Amp, dil. relay. 6 form C. Coil voltage 110 V DC. Amber sealed type. Single side stable. Contact material: gold-clad silver. |
Matsushita Electric Works(Nais) |
| 35 |
NL6EBX-DC110V-1 |
NL-relay. 6PDT, 2 Amp, dil. relay. 6 form C. Coil voltage 110 V DC. Amber sealed type. Single side stable. Contact material: gold-cap over silver palladium. |
Matsushita Electric Works(Nais) |
| 36 |
NL6EBX-L2-DC110V |
NL-relay. 6PDT, 2 Amp, dil. relay. 6 form C. Coil voltage 110 V DC. Amber sealed type. 2 coil latching. Contact material: gold-clad silver. |
Matsushita Electric Works(Nais) |
| 37 |
NL6EBX-L2-DC110V-1 |
NL-relay. 6PDT, 2 Amp, dil. relay. 6 form C. Coil voltage 110 V DC. Amber sealed type. 2 coil latching. Contact material: gold-cap over silver palladium. |
Matsushita Electric Works(Nais) |
| 38 |
TN80C186EBXX |
16-BIT HIGH-INTEGRATION EMBEDDED PROCESSORS |
Intel |
| 39 |
TN80C188EBXX |
16-BIT HIGH-INTEGRATION EMBEDDED PROCESSORS |
Intel |
| | | |
