No. |
Part Name |
Description |
Manufacturer |
31 |
2N7002KA |
N Channel MOSFET ESD Protected 2000V |
Korea Electronics (KEC) |
32 |
2N7002KU |
N Channel MOSFET ESD Protected 2000V |
Korea Electronics (KEC) |
33 |
ACT-PS512K8Y-020L2T |
High speed 4 Megabit plastic monolithic SRAM. Options temp cycle & burn-in. Speed 20ns. |
Aeroflex Circuit Technology |
34 |
ADM6819 |
FET Drive Simple Sequencer™ w/Fixed 200ms Delay |
Analog Devices |
35 |
BQ24001PWPG4 |
Linear 1-cell Li-Ion Battery Charger w/Integrated FET, One LED 20-HTSSOP 0 to 70 |
Texas Instruments |
36 |
BQ24002PWPG4 |
Linear 1-cell Li-Ion Battery Charger w/Integrated FET, Two LED 20-HTSSOP -20 to 70 |
Texas Instruments |
37 |
BQ24002PWPRG4 |
Linear 1-cell Li-Ion Battery Charger w/Integrated FET, Two LED 20-HTSSOP -20 to 70 |
Texas Instruments |
38 |
BQ24003PWPG4 |
Linear 1-cell Li-Ion Battery Charger W/Integrated FET, Bi-Color LED 20-HTSSOP 0 to 70 |
Texas Instruments |
39 |
BQ24004PWPG4 |
Linear 2-cell Li-Ion Battery Charger w/Integrated FET, One LED 20-HTSSOP 0 to 70 |
Texas Instruments |
40 |
BQ24004PWPRG4 |
Linear 2-cell Li-Ion Battery Charger w/Integrated FET, One LED 20-HTSSOP 0 to 70 |
Texas Instruments |
41 |
BQ24005PWPG4 |
Linear 2-cell Li-Ion Battery Charger w/Integrated FET, Two LED 20-HTSSOP -20 to 70 |
Texas Instruments |
42 |
BQ24005PWPRG4 |
Linear 2-cell Li-Ion Battery Charger w/Integrated FET, Two LED 20-HTSSOP -20 to 70 |
Texas Instruments |
43 |
BQ24006PWPG4 |
Linear 2-cell Li-Ion Battery Charger w/Integrated FET, Bi-Color LED 20-HTSSOP 0 to 70 |
Texas Instruments |
44 |
BQ24006PWPRG4 |
Linear 2-cell Li-Ion Battery Charger w/Integrated FET, Bi-Color LED 20-HTSSOP 0 to 70 |
Texas Instruments |
45 |
BQ24008PWPG4 |
Linear 1-cell Li-Ion Battery Charger W/Integrated FET, Bi-Color LED 20-HTSSOP -20 to 70 |
Texas Instruments |
46 |
CY39100V484B-200BBC |
Delta39K ISR CPLD. Speed 200 MHz. |
Cypress |
47 |
CY7C1511V18-200BZC |
72 Mbit QDR-II SRAM 4-word burst architecture. Speed 200 MHz. |
Cypress |
48 |
CY7C1513V18-200BZC |
72 Mbit QDR-II SRAM 4-word burst architecture. Speed 200 MHz. |
Cypress |
49 |
CY7C1515V18-200BZC |
72 Mbit QDR-II SRAM 4-word burst architecture. Speed 200 MHz. |
Cypress |
50 |
CY7C1526V18-200BZC |
72 Mbit QDR-II SRAM 4-word burst architecture. Speed 200 MHz. |
Cypress |
51 |
EN27LV010200J |
1Megabit low voltage EPROM (128K x 8). Speed 200ns. 3.0V to 3.6V Vcc tolerance. |
Eon Silicon Solution |
52 |
EN27LV010200JI |
1Megabit low voltage EPROM (128K x 8). Speed 200ns. 3.0V to 3.6V Vcc tolerance. |
Eon Silicon Solution |
53 |
EN27LV010200P |
1Megabit low voltage EPROM (128K x 8). Speed 200ns. 3.0V to 3.6V Vcc tolerance. |
Eon Silicon Solution |
54 |
EN27LV010200PI |
1Megabit low voltage EPROM (128K x 8). Speed 200ns. 3.0V to 3.6V Vcc tolerance. |
Eon Silicon Solution |
55 |
EN27LV010200T |
1Megabit low voltage EPROM (128K x 8). Speed 200ns. 3.0V to 3.6V Vcc tolerance. |
Eon Silicon Solution |
56 |
EN27LV010200TI |
1Megabit low voltage EPROM (128K x 8). Speed 200ns. 3.0V to 3.6V Vcc tolerance. |
Eon Silicon Solution |
57 |
EN27LV010B200J |
1Megabit low voltage EPROM (128K x 8). Speed 200ns. 2.7V to 3.6V Vcc tolerance. |
Eon Silicon Solution |
58 |
EN27LV010B200JI |
1Megabit low voltage EPROM (128K x 8). Speed 200ns. 2.7V to 3.6V Vcc tolerance. |
Eon Silicon Solution |
59 |
EN27LV010B200P |
1Megabit low voltage EPROM (128K x 8). Speed 200ns. 2.7V to 3.6V Vcc tolerance. |
Eon Silicon Solution |
60 |
EN27LV010B200PI |
1Megabit low voltage EPROM (128K x 8). Speed 200ns. 2.7V to 3.6V Vcc tolerance. |
Eon Silicon Solution |
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